In-SituX-Ray Observation of Molecular Structure in Organic Thin Films during Evaporation Process by Total Reflection In-Plane X-Ray Diffractometer

1992 ◽  
Vol 31 (Part 1, No. 12A) ◽  
pp. 4081-4085 ◽  
Author(s):  
Kouichi Hayashi ◽  
Kenji Ishida ◽  
Toshihisa Horiuchi ◽  
Kazumi Matsushige
1996 ◽  
Vol 281-282 ◽  
pp. 542-544
Author(s):  
Kenji Orita ◽  
Kouichi Hayashi ◽  
Toshihisa Horiuchi ◽  
Kazumi Matsushige

1988 ◽  
Vol 32 ◽  
pp. 105-114 ◽  
Author(s):  
H. Schwenke ◽  
W. Berneike ◽  
J. Knoth ◽  
U. Weisbrod

AbstractThe total reflection of X-rays is mainly determined by three parameters , that is the orltical angle, the reflectivity and the penetration depth. For X-ray fluorescence analysis the respective characteristic features can be exploited in two rather different fields of application. In the analysis of trace elements in samples placed as thin films on optical flats, detection limits as low as 2 pg or 0.05 ppb, respectively, have been obtained. In addition, a penetration depth in the nanometer regime renders Total Reflection XRF an inherently sensitive method for the elemental analysis of surfaces. This paper outlines the main physical and constructional parameters for instrumental design and quantitation in both branches of TXRF.


2018 ◽  
Vol 29 (21) ◽  
pp. 1806119 ◽  
Author(s):  
Andrea Ciavatti ◽  
Laura Basiricò ◽  
Ilaria Fratelli ◽  
Stefano Lai ◽  
Piero Cosseddu ◽  
...  

Hyomen Kagaku ◽  
1998 ◽  
Vol 19 (4) ◽  
pp. 259-264
Author(s):  
Kenji ISHIDA ◽  
Toshihisa HORIUCHI ◽  
Kazumi MATSUSHIGE MATSUSHIGE

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