Deep Level Transient Spectroscopy Characterization of Electron Irradiation Induced Hole Traps in p-GaAs Grown by Molecular Beam Epitaxy
1993 ◽
Vol 32
(Part 2, No. 7B)
◽
pp. L974-L977
◽
2000 ◽
Vol 209
(4)
◽
pp. 653-660
◽
2000 ◽
Vol 212
(1-2)
◽
pp. 49-55
◽
1999 ◽
Vol 203
(1-2)
◽
pp. 31-39
◽
1995 ◽
Vol 11
(10)
◽
pp. 1079-1082
◽
2011 ◽
Vol 295-297
◽
pp. 777-780
◽
1993 ◽
Vol 11
(3)
◽
pp. 892
◽
Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxy
1994 ◽
Vol 28
(1-3)
◽
pp. 400-403