Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2Ga0.8N/GaN interface and the rapid thermal annealing effect

ABSTRACTDeep levels in Si doped AlxGa1−xN samples, with Al mole fraction in the range of x = 0 to 0.30, grown by radio-frequency plasma activated molecular beam epitaxy on sapphire substrates were characterized by deep level transient spectroscopy (DLTS). DLTS measurements show two significant electron traps, P1 and P2, in AlGaN at all aluminum mole fractions. The electron trap, P2, appears to be a superposition of traps A and B , both of which are observed in GaN grown by various growth techniques and are thought to be related to VGa-shallow donor complexes. Trap P1 is related to line defects and N-related point defects. Both of these traps are distributed throughout the bulk of the epitaxial layer. An additional trap P0 which was observed in Al0.20Ga0.80N and Al0.30Ga0.70N is of unknown origin, but like P1 and P2, it exhibits dislocation-related capture kinetics. The activation energy measured from the conduction band of the defects is found to increase with Al mole content, a behavior consistent with other III-V semiconductors.

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Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.295-297.777 ◽

2011 ◽

Vol 295-297 ◽

pp. 777-780 ◽

Cited By ~ 1

Author(s):

M. Ajaz Un Nabi ◽

M. Imran Arshad ◽

Adnan Ali ◽

M. Asghar ◽

M. A Hasan

Keyword(s):

Molecular Beam Epitaxy ◽

Deep Level Transient Spectroscopy ◽

Molecular Beam ◽

Deep Level ◽

Diffusion Mechanism ◽

Electron Trap ◽

Si Substrate ◽

Bulk Gan ◽

Related Defect ◽

Transient Spectroscopy

In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown onp-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.

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Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

Journal of Materials Research ◽

10.1557/jmr.1989.0241 ◽

1989 ◽

Vol 4 (2) ◽

pp. 241-243 ◽

Cited By ~ 4

Author(s):

Yutaka Tokuda ◽

Nobuji Kobayashi ◽

Yajiro Inoue ◽

Akira Usami ◽

Makoto Imura

Keyword(s):

Heat Treatment ◽

Thermal Stress ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Electron Trap ◽

Thermal Donor ◽

Transient Spectroscopy ◽

Spectroscopy Studies

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

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The Ion Implanted Arsenic Tail in Silicon

MRS Proceedings ◽

10.1557/proc-147-73 ◽

1989 ◽

Vol 147 ◽

Cited By ~ 1

Author(s):

S. E. Beck ◽

R. J. Jaccodine ◽

C. Clark

Keyword(s):

Silicon Dioxide ◽

Thermal Annealing ◽

Anodic Oxidation ◽

Rapid Thermal Annealing ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Electrical Activation ◽

Spreading Resistance ◽

Transient Spectroscopy ◽

And Diffusion

AbstractRapid thermal annealed tail regions of shallow junction arsenic implants into silicon have been investigated. Tail profiles have been roduced by an anodic oxidation and stripping technique after implantation to fluences of 1014 to 1016 cm−2 and by implanting through a layer of silicon dioxide. Electrical activation and diffusion have been achieved by rapid thermal annealing in the temperature range of 800 to 1100 °C. Electrically active defects remain after annealing. Spreading resistance and deep level transient spectroscopy results are presented. The diffusion of the arsenic tail is discussed and compared with currently accepted models.

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Characterization of Si-doped Ga0.52In0.48P grown by solid source molecular beam epitaxy using deep level transient spectroscopy

Journal of Crystal Growth ◽

10.1016/s0022-0248(99)00731-9 ◽

2000 ◽

Vol 209 (4) ◽

pp. 653-660 ◽

Cited By ~ 1

Author(s):

S.F. Yoon ◽

P.Y. Lui ◽

H.Q. Zheng

Keyword(s):

Molecular Beam Epitaxy ◽

Deep Level Transient Spectroscopy ◽

Molecular Beam ◽

Deep Level ◽

Si Doped ◽

Transient Spectroscopy

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Studies of Oxygen Introduced During Thermal Oxidation and Defects Induced by Rapid Thermal Annealing in Silicon Epitaxial Layers

MRS Proceedings ◽

10.1557/proc-224-95 ◽

1991 ◽

Vol 224 ◽

Author(s):

Akira Usami ◽

Taichi Natori ◽

Akira Ito ◽

Takahide Sugiyama ◽

Seiya Hirota ◽

...

Keyword(s):

Thermal Oxidation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Epitaxial Layer ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Epitaxial Layers ◽

Shallow Trap ◽

Transient Spectroscopy

AbstractIntroduction of oxygen during thermal oxidation and production of defects by rapid thermal annealing (RTA) in n-type epitaxial Si layers were studied with deep-level transient spectroscopy measurements. We use oxygen-related thermal donors (TDs) as a monitor for introduction of oxygen in silicon epitaxial layers. It is found that oxygen is introduced from the substrate into the epitaxial layer after thermal annealing. The TD was almost annihilated by RTA at .700°C. However, a shallow trap (Ec−0.073±0.005 eV) was induced by RTA.

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On the Origin of the New Electron Traps Induced By Rapid Thermal Annealing in GaAs Using Capping Proximity Technique.

MRS Proceedings ◽

10.1557/proc-144-27 ◽

1988 ◽

Vol 144 ◽

Cited By ~ 4

Author(s):

G. Marrakchi ◽

G. Chaussemy ◽

A. Laugier ◽

G. Guillot.

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Native Defect ◽

Physical Origin ◽

Electron Traps ◽

Native Defects ◽

Growth Method ◽

Transient Spectroscopy

ABSTRACTRapid Thermal Annealing (RTA) effects on generation or annihilation of deep levels in GaAs have been investigated by Deep Level Transient Spectroscopy (DLTS). Capping proximity technique using three annealing configurations are employed to anneal Liquid Encapsulated Czochralski (LEC) and Bridgman (B) substrates, or Vapor Phase Epitaxy (VPE) and Liquid Phase Epitaxy (LPE) layers. The RTA treatment is performed from 800 to 950°C for two annealing times ( 3 and 10s).The DLTS data show that the evolution of the native defects depends on the GaAs growth method and also the annealing configuration. We observe the appearance of two new electron traps named RL1 and RL2 induced by the RTA process which depend on the kind of substrate: RL1 and RL2 are created in LEC material while only RL1 is detected in B material. A general comparison of our results with others reported in the literature show that these new electron traps are related to the change of stoichiometry at the GaAs surface and also depend on the existence of specific native defects in the starting GaAs material. It is proposed that the creation of RL1 is related to the EL6 native defect and discuss a possible physical origin for this level. We also propose that RL2 and EL5 originate from the same defect and suggest the divacancy VGaVAs as a possible origin for this trap.

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