Electrical Conductions of High Mobility Poly-Si Thin Film Transistors at Low Temperatures

1994 ◽  
Vol 33 (Part 2, No. 3B) ◽  
pp. L409-L412 ◽  
Author(s):  
Tadashi Serikawa ◽  
Seiiti Shirai ◽  
Sadao Takaoka ◽  
Kazuo Murase ◽  
Shuichi Ishida
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Si Thin Film

High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

2016 ◽  
Vol 4 (40) ◽  
pp. 9438-9444 ◽  
Author(s):  
Fukai Shan ◽  
Ao Liu ◽  
Huihui Zhu ◽  
Weijin Kong ◽  
Jingquan Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
Solution Process ◽  
High Mobility ◽  
High K ◽  
High K Dielectric ◽  
P Type

High-performance p-type NiOx thin-film transistors are fabricated via a low-cost solution process and exhibit a high mobility of around 15 cm2 V−1 s−1.

scholarly journals 1.3: Realization of Short Channel Thin Film Transistors with High Mobility IGTO

2021 ◽  
Vol 52 (S1) ◽  
pp. 7-7
Author(s):  
Weihua Wu ◽  
Yi Zhuo ◽  
Fangmei Liu ◽  
Yuanpeng Chen ◽  
Jiangbo Yao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Short Channel

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

2013 ◽  
Vol 103 (20) ◽  
pp. 203501 ◽  
Author(s):  
Uio-Pu Chiou ◽  
Jia-Min Shieh ◽  
Chih-Chao Yang ◽  
Wen-Hsien Huang ◽  
Yo-Tsung Kao ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Metal Gate ◽  
Si Thin Film ◽  
Nanocrystalline Si
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