Comparison of thin‐film transistors fabricated at low temperatures (≤600 °C) on as‐deposited and amorphized‐crystallized polycrystalline Si

1987 ◽  
Vol 61 (4) ◽  
pp. 1638-1642 ◽  
Author(s):  
K. T.‐Y. Kung ◽  
R. Reif
2020 ◽  
Vol 7 (9) ◽  
pp. 1822-1844 ◽  
Author(s):  
Nidhi Tiwari ◽  
Amoolya Nirmal ◽  
Mohit Rameshchandra Kulkarni ◽  
Rohit Abraham John ◽  
Nripan Mathews

The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.


1994 ◽  
Vol 33 (Part 2, No. 3B) ◽  
pp. L409-L412 ◽  
Author(s):  
Tadashi Serikawa ◽  
Seiiti Shirai ◽  
Sadao Takaoka ◽  
Kazuo Murase ◽  
Shuichi Ishida

2017 ◽  
Vol 729 ◽  
pp. 1195-1200 ◽  
Author(s):  
Dae-Gyu Yang ◽  
Hyoung-Do Kim ◽  
Jong Heon Kim ◽  
Kyung Park ◽  
Jung Hyun Kim ◽  
...  

2014 ◽  
Vol 2 (28) ◽  
pp. 5695-5703 ◽  
Author(s):  
Eun Jin Bae ◽  
Young Hun Kang ◽  
Mijeong Han ◽  
Changjin Lee ◽  
Song Yun Cho

We report the fabrication of high-performance metal oxide thin-film transistors (TFTs) with AlOx gate dielectrics using combustion chemistry in a solution process to provide energy to convert oxide precursors into oxides at low temperatures.


2018 ◽  
Vol 6 (2) ◽  
pp. 249-256 ◽  
Author(s):  
Young Jun Tak ◽  
Si Joon Kim ◽  
Sera Kwon ◽  
Hee jun Kim ◽  
Kwun-Bum Chung ◽  
...  

An all-sputtered oxide TFT process combined with simultaneous ultraviolet and thermal (SUT) treatment for consecutive fabrication processes at low temperatures.


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