Ammonium-Salt-Added Silica Slurry for the Chemical Mechanical Polishing of the Interlayer Dielectric Film Planarization in ULSI's

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 1037-1042 ◽  
Author(s):  
Yoshihiro Hayashi ◽  
Michio Sakurai ◽  
Tsutomu Nakajima ◽  
Kanji Hayashi ◽  
Syuzo Sasaki ◽  
...  
Keyword(s):  
Ammonium Salt ◽  
Chemical Mechanical Polishing ◽  
Dielectric Film ◽  
Mechanical Polishing ◽  
Interlayer Dielectric ◽  
Silica Slurry

The Surface Damage in SiO2 Caused by Chemical Mechanical Polishing on Ic-60 Pads

1994 ◽  
Vol 337 ◽  
Author(s):  
Shyam Murarka ◽  
Sen-Hou Ko ◽  
Minoru Tomozawa ◽  
Pei-Jun Ding ◽  
William A. Lanford
Keyword(s):  
Electrical Properties ◽  
Nuclear Reaction ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Surface Damage ◽  
Mechanical Polishing ◽  
Interlayer Dielectric ◽  
Silicon Devices ◽  
Thermal Oxide ◽  
Silica Slurry

ABSTRACTChemical Mechanical polishing (CMP) is a useful technique for achieving global planarization in the ICs. The CMP of oxide has been used and studied for decades. Only recently the technique has been employed for planarizing the interlayer dielectric (ILD) on the silicon devices circuits. The effect of such polishing on the performance of the ILD has been the concern. This paper examines the attempts on defining the damage caused by CMP and its effect on the electrical properties after polished SiO2 wafers. In this investigation the PECVD and thermal oxide films were polished in the colloidal silica slurry on IC 60 pad. The polished oxide were then studied using I-V and nuclear reaction technique. The results show a surface damage which extends to about 800 Å in the polished oxide. The changes occurring in the concentration of hydrogenous species at the surface of SiO2 as determined by nuclear reaction technique will also be presented. It is shown that due to CMP as-deposited CVD SiO2 films loose water from surface regions whereas well annealed or dry oxides gain water at the surface. The results will be discussed and mechanisms will be presented to explain electrical results.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

Colloidal Silica based High Selectivity Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Slurry

2005 ◽  
Vol 867 ◽  
Author(s):  
Kyoung-Ho Bu ◽  
Brij M. Moudgil
Keyword(s):  
Silicon Nitride ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Sodium Dodecyl ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Shallow Trench Isolation ◽  
Pattern Size ◽  
Trench Isolation ◽  
Silica Slurry

AbstractAmong various properties of chemical mechanical polishing (CMP) slurry, selectivity plays a key role in global planarization of high density and small pattern size shallow trench isolation (STI) process. Lack of adequate selectivity can lead to defects such as dishing and erosion. To improve the selectivity of STI CMP process, CMP characteristics of silica and silicon nitride wafer were investigated using colloidal silica slurry as a function of slurry pH. Sodium dodecyl sulfate (SDS), an anionic surfactant, was added to increase the selectivity of the slurry. As a result, selectivity increased from 3 to 25. It was concluded that selective passivation layer formed on silicon nitride wafer surface at acidic slurry pH range was responsible for the observed selectivity increase. Adsorption characteristics of SDS on silica and silicon nitride were measured as a function of slurry pH and concentration of SDS. As indicated by zeta potential behavior under acidic pH conditions, SDS adsorption on silicon nitride was significantly higher han silica due to the electrostatic forces. Significantly higher SDS coating on silicone nitride seems to have resulted in lubrication layer leading to increased polishing selectivity.

A New Poly-Si CMP Process with Small Erosion for Advanced Trench Isolation Process

2000 ◽  
Vol 612 ◽  
Author(s):  
Naoto Miyashita ◽  
Shin-ichiro Uekusa ◽  
Takeshi Nishioka ◽  
Satoko Iwami
Keyword(s):  
Experimental Work ◽  
Chemical Mechanical Polishing ◽  
Process Integration ◽  
Mechanical Polishing ◽  
Ph Dependency ◽  
Erosion Level ◽  
Organic Surfactant ◽  
New Process ◽  
Trench Isolation ◽  
Silica Slurry

AbstractChemical-Mechanical Polishing has been revealed as an attractive technique for poly-Si of trench planalization. Major issue of the process integration is pattern erosion after over polishing. A new process with silica slurry containing organic surfactant is reported in this paper. A patterned wafer after conventional CMP process is eroded by over polishing, however, the new process conducts small erosion for wide trenches. The organic surfactant is well known as a inhibitor for the protection of poly-Si from alkaline, and the new slurry shows a large pH dependency of the viscosity. The experimental work has been focused on the viscosity, and the mechanism of the small erosion is discussed. This new process should be useful for recessing poly-Si by CMP, because it keeps the erosion level very low.

Fumed Silica Slurry Stabilizing Methods for Chemical Mechanical Polishing

2003 ◽  
Vol 42 (Part 1, No. 2A) ◽  
pp. 418-423 ◽  
Author(s):  
Shinichi Haba ◽  
Keiji Fukuda ◽  
Yoshiharu Ohta ◽  
Yasushi Koubuchi ◽  
Takashi Katouda
Keyword(s):  
Chemical Mechanical Polishing ◽  
Fumed Silica ◽  
Mechanical Polishing ◽  
Silica Slurry

A New Poly-Si CMP Process with Small Erosion for Advanced Trench Isolation Process

2000 ◽  
Vol 613 ◽  
Author(s):  
Naoto Miyashita ◽  
Shin-ichiro Uekusa ◽  
Takeshi Nishioka ◽  
Satoko Iwami
Keyword(s):  
Experimental Work ◽  
Chemical Mechanical Polishing ◽  
Process Integration ◽  
Mechanical Polishing ◽  
Ph Dependency ◽  
Erosion Level ◽  
Organic Surfactant ◽  
New Process ◽  
Trench Isolation ◽  
Silica Slurry

ABSTRACTChemical-Mechanical Polishing has been revealed as an attractive technique for poly-Si of trench planalization. Major issue of the process integration is pattern erosion after over polishing. A new process with silica slurry containing organic surfactant is reported in this paper. A patterned wafer after conventional CMP process is eroded by over polishing, however, the new process conducts small erosion for wide trenches. The organic surfactant is well known as a inhibitor for the protection of poly-Si from alkaline, and the new slurry shows a large pH dependency of the viscosity. The experimental work has been focused on the viscosity, and the mechanism of the small erosion is discussed. This new process should be useful for recessing poly-Si by CMP, because it keeps the erosion level very low.

Dynamic Contact Characteristics During Chemical Mechanical Polishing (CMP)

2003 ◽  
Vol 767 ◽  
Author(s):  
Wonseop Choi ◽  
Seung-Mahn Lee ◽  
Rajiv K. Singh
Keyword(s):  
Friction Force ◽  
Chemical Mechanical Polishing ◽  
Dynamic Contact ◽  
Mechanical Polishing ◽  
Force Measurements ◽  
Solids Loading ◽  
Silica Slurry ◽  
Contact Mechanism ◽  
Lateral Friction

AbstractIn chemical mechanical polishing (CMP), it is critical to understand dynamic contact at the pad-particles-wafer interface for desired CMP performance. The dynamic contact is dependent on process variables (platen velocity and down pressure) and particle characteristics (size and concentration), which in turn affect friction force. In this study, we have characterized the dynamic contact at the pad-particles-wafer interface as a function of platen velocity and down pressure. In situ lateral friction force measurements were carried out for silica slurry / sapphire wafer system in order to investigate the dynamic contact during polishing. As solids loading increases, the slope in the friction force vs. platen velocity curve changes from a negative to a positive value. Friction force increases with down pressure for different solids loading conditions. Consequently, friction force is determined as a function of down pressure and platen velocity, validating a dynamic contact mechanism during CMP.

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