A New Poly-Si CMP Process with Small Erosion for Advanced Trench Isolation Process

2000 ◽  
Vol 613 ◽  
Author(s):  
Naoto Miyashita ◽  
Shin-ichiro Uekusa ◽  
Takeshi Nishioka ◽  
Satoko Iwami
Keyword(s):  
Experimental Work ◽  
Chemical Mechanical Polishing ◽  
Process Integration ◽  
Mechanical Polishing ◽  
Ph Dependency ◽  
Erosion Level ◽  
Organic Surfactant ◽  
New Process ◽  
Trench Isolation ◽  
Silica Slurry

ABSTRACTChemical-Mechanical Polishing has been revealed as an attractive technique for poly-Si of trench planalization. Major issue of the process integration is pattern erosion after over polishing. A new process with silica slurry containing organic surfactant is reported in this paper. A patterned wafer after conventional CMP process is eroded by over polishing, however, the new process conducts small erosion for wide trenches. The organic surfactant is well known as a inhibitor for the protection of poly-Si from alkaline, and the new slurry shows a large pH dependency of the viscosity. The experimental work has been focused on the viscosity, and the mechanism of the small erosion is discussed. This new process should be useful for recessing poly-Si by CMP, because it keeps the erosion level very low.

A New Poly-Si CMP Process with Small Erosion for Advanced Trench Isolation Process

2000 ◽  
Vol 612 ◽  
Author(s):  
Naoto Miyashita ◽  
Shin-ichiro Uekusa ◽  
Takeshi Nishioka ◽  
Satoko Iwami
Keyword(s):  
Experimental Work ◽  
Chemical Mechanical Polishing ◽  
Process Integration ◽  
Mechanical Polishing ◽  
Ph Dependency ◽  
Erosion Level ◽  
Organic Surfactant ◽  
New Process ◽  
Trench Isolation ◽  
Silica Slurry

AbstractChemical-Mechanical Polishing has been revealed as an attractive technique for poly-Si of trench planalization. Major issue of the process integration is pattern erosion after over polishing. A new process with silica slurry containing organic surfactant is reported in this paper. A patterned wafer after conventional CMP process is eroded by over polishing, however, the new process conducts small erosion for wide trenches. The organic surfactant is well known as a inhibitor for the protection of poly-Si from alkaline, and the new slurry shows a large pH dependency of the viscosity. The experimental work has been focused on the viscosity, and the mechanism of the small erosion is discussed. This new process should be useful for recessing poly-Si by CMP, because it keeps the erosion level very low.

Colloidal Silica based High Selectivity Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Slurry

2005 ◽  
Vol 867 ◽  
Author(s):  
Kyoung-Ho Bu ◽  
Brij M. Moudgil
Keyword(s):  
Silicon Nitride ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Sodium Dodecyl ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Shallow Trench Isolation ◽  
Pattern Size ◽  
Trench Isolation ◽  
Silica Slurry

AbstractAmong various properties of chemical mechanical polishing (CMP) slurry, selectivity plays a key role in global planarization of high density and small pattern size shallow trench isolation (STI) process. Lack of adequate selectivity can lead to defects such as dishing and erosion. To improve the selectivity of STI CMP process, CMP characteristics of silica and silicon nitride wafer were investigated using colloidal silica slurry as a function of slurry pH. Sodium dodecyl sulfate (SDS), an anionic surfactant, was added to increase the selectivity of the slurry. As a result, selectivity increased from 3 to 25. It was concluded that selective passivation layer formed on silicon nitride wafer surface at acidic slurry pH range was responsible for the observed selectivity increase. Adsorption characteristics of SDS on silica and silicon nitride were measured as a function of slurry pH and concentration of SDS. As indicated by zeta potential behavior under acidic pH conditions, SDS adsorption on silicon nitride was significantly higher han silica due to the electrostatic forces. Significantly higher SDS coating on silicone nitride seems to have resulted in lubrication layer leading to increased polishing selectivity.

Mechanism of a New Post CMP Cleaning for Trench Isolation Process

1999 ◽  
Vol 566 ◽  
Author(s):  
N. Miyashita ◽  
Y. Mase ◽  
J. Takayasu ◽  
Y. Minami ◽  
M. Kodera ◽  
...  
Keyword(s):  
Experimental Work ◽  
Process Integration ◽  
Silica Particles ◽  
Cleaning Process ◽  
Cleaning Method ◽  
Organic Surfactant ◽  
Trench Isolation ◽  
Critical Problems ◽  
Metallic Impurities

CMP has been revealed as an attractive technique to poly Si of trench planalizing process. Major issues of process integration for that purpose have been post-CMP cleaning process. A new post CMP cleaning process which employed special organic surfactant has been reported in this paper. In general, wafers after CMP process are contaminated by particles and metallic impurities in the case of conventional cleaning method. The contamination introduce the defects into the wafers after oxidation. The contamination was removed by new cleaning method. using DI water containing special organic surfactant and silica particles. The experimental work has focused on critical problems that had to be solved, using AFM, EDX and VPDICP/MS.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

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