Effects of Insulator Surface Roughness on Al-Alloy Film Crystallographic Orientation in Al-Alloy/Ti/Insulator Structure

1995 ◽  
Vol 34 (Part 2, No. 8B) ◽  
pp. L1037-L1040 ◽  
Author(s):  
Hiroshi Onoda ◽  
Kenshin Touchi ◽  
Keiichi Hashimoto
1996 ◽  
Vol 428 ◽  
Author(s):  
K. P. Rodbell ◽  
V. Svilan ◽  
L. M. Gignac ◽  
P. W. Dehaven ◽  
R. J. Murphy ◽  
...  

AbstractMaterial anisotropy implies that many film properties are affected by crystallographic orientation in the growth direction (out-of-plane texture) and / or in the plane of growth (in-plane texture). Physical vapor deposited (PVD) Ti and Al-alloy films deposited on silicon dioxide substrates typically exhibit strong fiber textures in the growth direction with little in-plane-texture observed. The strength of these fiber textures has been found to vary substantially depending on the details of the deposition process(es) and, to a lesser degree, on any post-deposition anneals. In this paper the role of the substrate surface roughness in defining film texture is reported. It was found that the substrate surface roughness determines the overlying film crystallographic orientation for Ti and Ti/AlCu films deposited on various oxides. Furthermore, it was found that the texture of the initial metal “seed” layer defines the texture in subsequently deposited films (texture inheritance). Modifications to the oxide surface which decrease the surface roughness lead to an improved crystallographic texture in Ti, AlCu, Ti/AlCu and Ti/TiN/AlCu films. Film orientation was determined from crystallographic pole figures measured using x-ray diffraction (XRD). The oxide surface roughness was measured using atomic force microscopy (AFM), transmission electron microscopy (TEM) and glancing incidence x-ray reflectivity (GIXR).


2007 ◽  
Vol 101 (9) ◽  
pp. 09J514 ◽  
Author(s):  
Y. Takeda ◽  
S. Yoshimura ◽  
M. Takano ◽  
H. Asano ◽  
M. Matsui

1987 ◽  
Vol 2 (7) ◽  
pp. 657-658 ◽  
Author(s):  
K. Saito ◽  
T. Mori ◽  
T. Shimizu
Keyword(s):  

1997 ◽  
Vol 3 (S2) ◽  
pp. 469-470
Author(s):  
J.L. Drown ◽  
S.M. Merchant ◽  
M.E. Gross ◽  
D. Eaglesham ◽  
L.A. Giannuzzi ◽  
...  

Titanium nitride (TiN) films are used as anti-reflection coatings (ARC) on aluminum (Al) films to facilitate lithography processes during multilevel metallization for the manufacture of integrated circuits on silicon-based (Si) semiconductor devices. It is generally accepted in the literature that the microstructure of multilevel metal stacks is influenced by the texture of the substrate. For the case of interconnect materials used in the semiconductor industry, a typical metal stack is as follows: Titanium/Titanium Nitride/Al-alloy/ARC-Titanium Nitride. The Ti/TiN layer underneath the Al-alloy film is used as a barrier stack to prevent junction spiking. The Ti/TiN underlayer also determines the growth conditions (crystallography and orientation relationships) of the subsequent Al-alloy film.This study focuses on the microstructural characterization of the ARC-TiN layer on Si-oxide and Ti/TiN/Al-alloy substrates that are fabricated under similar conditions using conventional physical vapor deposition (PVD - sputtering) techniques. The ARC-TiN microstructure was investigated by transmission electron microscopy (TEM) using a Philips EM430 operating at 300 kV.


Materials ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 451 ◽  
Author(s):  
Yujiong Chen ◽  
Hua Sun ◽  
Zechen Li ◽  
Yi Wu ◽  
Yakai Xiao ◽  
...  

Selective laser melting (SLM) is known to generate large and anisotropic residual stresses in the samples. Accurate measurement of residual stresses on SLM-produced samples is essential for understanding the residual stress build-up mechanism during SLM, while a dramatic fluctuation can be observed in the residual stress values reported in the literature. On the basis of studying the influence of surface roughness on residual stress measured using X-ray diffraction (XRD), we propose a procedure coupling XRD technique with pretreatment consisting of mechanical polishing and chemical etching. The results highlight that residual stresses measured using XRD on as-built SLM-produced samples with high surface roughness are significantly lower than those measured on samples with finished surface, which is due to the stress relaxation on the spiked surface of as-built samples. Surface distribution of residual stresses and the effect of scanning strategy were systematically investigated for SLM-produced AlSi10Mg samples. Microstructural morphology was observed at the interface between sample and building platform and was linked to the surface distribution of residual stresses. This procedure can help us accurately measure the residual stresses in SLM-produced samples and thus better understand its build-up mechanism during the SLM process.


2020 ◽  
Vol 190 ◽  
pp. 108561 ◽  
Author(s):  
Shuhui Lv ◽  
Xiaoling Lu ◽  
Yanwei Li ◽  
Fanzhi Meng ◽  
Xiru Hua ◽  
...  

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