Effects of Sulfide Treatment on InP Metal-Insulator-Semiconductor Devices with Photochemical Vapor Deposit $\bf P_{3}N_{5}$ Gate Insulators

1995 ◽  
Vol 34 (Part 2, No. 10B) ◽  
pp. L1329-L1331
Author(s):  
Yoon-Ha Jeong ◽  
Bong-Hoon Lee ◽  
Seong-Kue Jo ◽  
Moon-Young Jeong ◽  
Takuo Sugano
Keyword(s):  
Semiconductor Devices ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gate Insulators ◽  
Vapor Deposit

Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices

1997 ◽  
Vol 310 (1-2) ◽  
pp. 1-7 ◽  
Author(s):  
H. Hbib ◽  
O. Bonnaud ◽  
M. Gauneau ◽  
L. Hamedi ◽  
R. Marchand ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gate Insulators

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

2014 ◽  
Vol 116 (1) ◽  
pp. 014504 ◽  
Author(s):  
R. V. Galatage ◽  
D. M. Zhernokletov ◽  
H. Dong ◽  
B. Brennan ◽  
C. L. Hinkle ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Frequency Dispersion ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gap States

scholarly journals Determination of Interface-State Distributions in Polymer-Based Metal-Insulator-Semiconductor Capacitors by Impedance Spectroscopy

2018 ◽  
Vol 8 (9) ◽  
pp. 1493 ◽  
Author(s):  
Hideyuki Hatta ◽  
Yuhi Miyagawa ◽  
Takashi Nagase ◽  
Takashi Kobayashi ◽  
Takashi Hamada ◽  
...  
Keyword(s):  
Impedance Spectroscopy ◽  
Field Effect Transistors ◽  
Interface State ◽  
Interface States ◽  
Localized States ◽  
Electrical Performance ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gate Insulators ◽  
Mis Capacitors

Information on localized states at the interfaces of solution-processed organic semiconductors and polymer gate insulators is critical to the development of printable organic field-effect transistors (OFETs) with good electrical performance. This paper reports on the use of impedance spectroscopy to determine the energy distribution of the density of interface states in organic metal-insulator-semiconductor (MIS) capacitors based on poly(3-hexylthiophene) (P3HT) with three different polymer gate insulators, including polyimide, poly(4-vinylphenol), and poly(methylsilsesquioxane). The findings of the study indicate that the impedance characteristics of the P3HT MIS capacitors are strongly affected by patterning and thermal annealing of the organic semiconductor films. To extract the interface-state distributions from the conductance of the P3HT MIS capacitors, an equivalent circuit model with continuum trap states is used, which also takes the band-bending fluctuations into consideration. In addition, the relationship between the determined interface states and the electrical characteristics of P3HT-based OFETs is investigated.

scholarly journals DYNAMIC STORAGE TIME MEASUREMENTS OF N-TYPE Hg1-xCdxTe METAL-INSULATOR-SEMICONDUCTOR DEVICES

1994 ◽  
Vol 43 (11) ◽  
pp. 1883
Author(s):  
HUANG HE ◽  
TANG DING-YUAN ◽  
TONG FEI-MING ◽  
ZHENG GUO-ZHEN
Keyword(s):  
Storage Time ◽  
Semiconductor Devices ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Dynamic Storage
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