A Novel Thin Gate-Oxide-Thickness Measurement Method by LDD (Lightly-Doped-Drain)- NMOS (N-Channel Metal-Oxide-Semiconductor) Transistors

1998 ◽  
Vol 37 (Part 2, No. 1A/B) ◽  
pp. L1-L3
Author(s):  
Jiaw-Ren Shih ◽  
Jian-Hsing Lee ◽  
B. K. Liew ◽  
Huey-Liang Hwang
Keyword(s):  
Metal Oxide ◽  
Measurement Method ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Thickness Measurement ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Oxide Thickness ◽  
Thin Gate Oxide ◽  
Lightly Doped Drain

Study of defects induced by high‐electric‐field stress into a thin gate oxide (11 nm) of metal‐oxide‐semiconductor capacitors

1993 ◽  
Vol 74 (2) ◽  
pp. 1124-1130 ◽  
Author(s):  
Abdelillah El‐Hdiy ◽  
Guy Salace ◽  
Christian Petit ◽  
Marc Jourdain ◽  
Dominique Vuillaume
Keyword(s):  
Electric Field ◽  
Metal Oxide ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
High Electric Field ◽  
Oxide Semiconductor ◽  
Field Stress ◽  
Thin Gate Oxide
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