scholarly journals Atmospheric oxygen in Mn doped GaAs/GaAs(001) thin films grown by molecular beam epitaxy

2007 ◽  
Vol 301-302 ◽  
pp. 54-57 ◽  
Author(s):  
J.F. Xu ◽  
P.M. Thibado ◽  
C. Awo-Affouda ◽  
R. Moore ◽  
V.P. LaBella
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atmospheric Oxygen ◽  
Mn Doped

A study of the grain size and electric properties of Mn-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy

2009 ◽  
Vol 6 (6) ◽  
pp. 1468-1471 ◽  
Author(s):  
Hung-Ji Lin ◽  
Der-Yuh Lin ◽  
Jia-Zheng Hong ◽  
Chu-Shou Yang ◽  
Chih-Ming Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electric Properties ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mn Doped

Structural, Magnetic and Electronic Properties of Dilute MnScN(001) Grown by RF Nitrogen Plasma Molecular Beam Epitaxy

2011 ◽  
Vol 1290 ◽  
Author(s):  
Costel Constantin ◽  
Kangkang Wang ◽  
Abhijit Chinchore ◽  
Han-Jong Chia ◽  
John Markert ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Saturation Magnetization ◽  
Electronic Properties ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Manganese Concentration ◽  
Scandium Nitride ◽  
Mn Concentration ◽  
Mn Doped

ABSTRACTThe structural, magnetic, and electronic properties of dilute Mn-doped scandium nitride thin films grown by radio frequency N-plasma molecular beam epitaxy are explored. The results indicate a small magnetization extending up to as high as 350K. There is a slight dependence on the manganese concentration, with the lower Mn concentration showing a larger saturation magnetization.

Room temperature ferromagnetism in (Ga1−xMnx)2O3 epitaxial thin films

2015 ◽  
Vol 3 (8) ◽  
pp. 1830-1834 ◽  
Author(s):  
Daoyou Guo ◽  
Zhenping Wu ◽  
Yuehua An ◽  
Xiaojiang Li ◽  
Xuncai Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
Epitaxial Thin Films ◽  
Laser Molecular Beam Epitaxy ◽  
Mn Doped

Mn-doped monoclinic β-(Ga1−xMnx)2O3 thin films were epitaxially grown on α-Al2O3 (0001) substrates by alternately depositing Ga2O3 and Mn layers using the laser molecular beam epitaxy technique.

scholarly journals Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Molecular Beam

As-Grown Superconducting SmFeAs(O,F) Thin Films by Molecular Beam Epitaxy

2012 ◽  
Vol 5 (5) ◽  
pp. 053101 ◽  
Author(s):  
Shinya Ueda ◽  
Soichiro Takeda ◽  
Shiro Takano ◽  
Michio Naito
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Multilayer Heterostructures ◽  
Annealing Experiments ◽  
Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

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