Device Performance of an n-Channel Organic Thin-Film Transistor with LiF/Al Bilayer Source and Drain Electrodes

2002 ◽  
Vol 41 (Part 2, No. 7A) ◽  
pp. L808-L810 ◽  
Author(s):  
Satoshi Hoshino ◽  
Shuichi Nagamatsu ◽  
Masayuki Chikamatsu ◽  
Masahiro Misaki ◽  
Yuji Yoshida ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Device Performance ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Effects of Device Architecture on the Performance of Organic Thin Film Transistors

2008 ◽  
Vol 1138 ◽  
Author(s):  
Xiaojing Zhou ◽  
Karyn E. Mutkins ◽  
Daniel Elkington ◽  
Kathleen Sirois ◽  
Warwick Belcher ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Channel Length ◽  
Device Performance ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Device Architecture ◽  
Electrochemical Transistor ◽  
The Impact

AbstractThe impact of device dimension and architecture on the device performance of an all–solution fabrication organic thin film transistor (OTFT) has been investigated. The saturation drain current is inversely proportional to the channel length, indicating that a characteristic of field–effect like transistor has been obtained. In contrast, the drain current is independent of the thickness of polyvinylphenol (PVP) dielectric layer and a large leakage current is observed at the gate electrode indicating that the device also shows electrochemical transistor characteristics. Although separate conductance measurements of a single poly(3–hexylthiophene) (P3HT) layer and a P3HT/PVP layer reveal that the conductance is proportional to the thickness of the layer, the maximum achieved drain current in the fabricated OTFT is inversely proportional to the P3HT thickness. Using this data, an interface of P3HT/PVP or a maximum P3HT thickness for a working transistor of approximately 160 ± 16 nm can be extracted. The mechanism of operation of these devices is discussed.

Formaldehyde Gas Sensor Based on Pentacene Organic Thin-Film Transistor

2013 ◽  
Vol 575-576 ◽  
pp. 477-480 ◽  
Author(s):  
Yu Cheng Chen ◽  
Jian Zhong ◽  
Lin Zhang
Keyword(s):  
Thin Film ◽  
Gas Sensors ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Response Characteristic ◽  
Device Performance ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Source Current ◽  
Good Repeatability

Formaldehyde (HCHO) gas sensors based on pentacene active layer and low cost poly (merthyl methacrylate) (PMMA) insulator were fabricated with a structure of bottom contact organic thin-film transistor (OTFT). The OTFT sensor not only presented a remarkable response characteristic in the absence and the presence of HCHO gas with different concentrations, but also exhibited a good repeatability for sensing the HCHO gas. Meanwhile, compared to the device operated in nitrogen circumstance, obvious changes in saturation drain-source current (IDS) and off-state current were observed when the device exposed to HCHO gas. Also the device performance and sensing mechanisms were discussed.

Improving the Organic Semiconductor- Metal Contact Interface in Printed High Performance Organic TFTs

2012 ◽  
Vol 1402 ◽  
Author(s):  
Kanan Puntambekar ◽  
Lisa Stecker ◽  
Kurt Ulmer ◽  
Themistokles Afentakis ◽  
Steven Droes
Keyword(s):  
Organic Semiconductor ◽  
High Performance ◽  
Thin Film Transistor ◽  
Device Performance ◽  
Organic Thin Film ◽  
Contact Interface ◽  
Organic Thin Film Transistor ◽  
Metal Electrodes ◽  
Free Surfaces ◽  
Gas Plasma

ABSTRACTOptimization of the interface between the organic semiconductor (OSC) & the source-drain (S/D) electrode is critical in order to improve organic thin film transistor (OTFT) device performance. This process typically involves coating the metal S/D electrodes with an optimal self-assembled thiol layer; a process that requires pristine metal surfaces for successful treatment. Obtaining contamination free surfaces can be challenging in the case of printed metal electrodes. Here we demonstrate an effective strategy to address this issue by introducing a brief low power forming gas plasma treatment prior to the surface coating step. We show a two orders of magnitude decrease in the contact resistance as a result of this treatment.

Physically Based Compact Mobility Model for Organic Thin-Film Transistor

2016 ◽  
Vol 63 (5) ◽  
pp. 2057-2065 ◽  
Author(s):  
T. K. Maiti ◽  
L. Chen ◽  
H. Zenitani ◽  
H. Miyamoto ◽  
M. Miura-Mattausch ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Mobility Model ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Physically Based

The detection of polyamines by an extended gate-type organic transistor functionalized with a carboxylate attached 1,3,4-thiadiazole derivative

2021 ◽  
Author(s):  
Koichiro Asano ◽  
Yui Sasaki ◽  
Qi Zhou ◽  
Riho Mitobe ◽  
Wei Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Pattern Recognition ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Gate Electrode ◽  
Organic Transistor ◽  
Thiadiazole Derivative

We herein report an extended gate-type organic thin-film transistor (OTFT)-based polyamine sensor and its application for pattern recognition. The extended-gate electrode was functionalized with a complex of copper(II) ions and...

Low-voltage operation of the organic thin film transistor with a diagonal configuration

2003 ◽  
Author(s):  
Toshihide Kamata ◽  
Manabu Yoshida ◽  
Sei Uemura ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Low Voltage Operation

Benchmarking organic thin film transistor inverter design styles

2021 ◽  
Vol 278 ◽  
pp. 116825
Author(s):  
Zhuozhi Yao ◽  
Ting-Jung Chang ◽  
David Wentzlaff ◽  
Barry P. Rand
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor
Sign in / Sign up

Export Citation Format

Share Document