Formaldehyde Gas Sensor Based on Pentacene Organic Thin-Film Transistor

2013 ◽  
Vol 575-576 ◽  
pp. 477-480 ◽  
Author(s):  
Yu Cheng Chen ◽  
Jian Zhong ◽  
Lin Zhang
Keyword(s):  
Thin Film ◽  
Gas Sensors ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Response Characteristic ◽  
Device Performance ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Source Current ◽  
Good Repeatability

Formaldehyde (HCHO) gas sensors based on pentacene active layer and low cost poly (merthyl methacrylate) (PMMA) insulator were fabricated with a structure of bottom contact organic thin-film transistor (OTFT). The OTFT sensor not only presented a remarkable response characteristic in the absence and the presence of HCHO gas with different concentrations, but also exhibited a good repeatability for sensing the HCHO gas. Meanwhile, compared to the device operated in nitrogen circumstance, obvious changes in saturation drain-source current (IDS) and off-state current were observed when the device exposed to HCHO gas. Also the device performance and sensing mechanisms were discussed.

Device Performance of an n-Channel Organic Thin-Film Transistor with LiF/Al Bilayer Source and Drain Electrodes

2002 ◽  
Vol 41 (Part 2, No. 7A) ◽  
pp. L808-L810 ◽  
Author(s):  
Satoshi Hoshino ◽  
Shuichi Nagamatsu ◽  
Masayuki Chikamatsu ◽  
Masahiro Misaki ◽  
Yuji Yoshida ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Device Performance ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Modelling and Simulation Approach for Organic Thin-Film Transistors Using MATLAB Simulation

2015 ◽  
Vol 1107 ◽  
pp. 514-519
Author(s):  
Umar Faruk Shuib ◽  
Khairul Anuar Mohamad ◽  
Afishah Alias ◽  
Tamer A. Tabet ◽  
Bablu K. Gosh ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Mobility Model ◽  
Channel Length ◽  
Analytical Models ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Organic Transistor

As organic transistors are preparing to make improvements towards flexible and low cost electronics applications, the analytical models and simulation methods were demanded to predict the optimized performance and circuit design. In this paper, we investigated the analytical model of an organic transistor device and simulate the output and transfer characteristics of the device using MATLAB tools for different channel length (L) of the organic transistor. In the simulation, the Pool-Frenkel mobility model was used to represent the conductive channel of organic transistor. The different channel length has been simulated with the value of 50 μm, 10 μm and 5 μm. This research paper analyses the performance of organic thin film transistor (TFT) for top contact bottom gate device. From the simulation, drain current of organic transistor was increased as the channel length decreased. Other extraction value such sub-threshold and current on/off ratio is 0.41 V and 21.1 respectively. Thus, the simulation provides significant extraction of information about the behaviour of the organic thin film transistor.

Effects of Device Architecture on the Performance of Organic Thin Film Transistors

2008 ◽  
Vol 1138 ◽  
Author(s):  
Xiaojing Zhou ◽  
Karyn E. Mutkins ◽  
Daniel Elkington ◽  
Kathleen Sirois ◽  
Warwick Belcher ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Channel Length ◽  
Device Performance ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Device Architecture ◽  
Electrochemical Transistor ◽  
The Impact

AbstractThe impact of device dimension and architecture on the device performance of an all–solution fabrication organic thin film transistor (OTFT) has been investigated. The saturation drain current is inversely proportional to the channel length, indicating that a characteristic of field–effect like transistor has been obtained. In contrast, the drain current is independent of the thickness of polyvinylphenol (PVP) dielectric layer and a large leakage current is observed at the gate electrode indicating that the device also shows electrochemical transistor characteristics. Although separate conductance measurements of a single poly(3–hexylthiophene) (P3HT) layer and a P3HT/PVP layer reveal that the conductance is proportional to the thickness of the layer, the maximum achieved drain current in the fabricated OTFT is inversely proportional to the P3HT thickness. Using this data, an interface of P3HT/PVP or a maximum P3HT thickness for a working transistor of approximately 160 ± 16 nm can be extracted. The mechanism of operation of these devices is discussed.

39.1: A Novel Organic Thin Film Transistor Fabricated by Low-Cost Process

2004 ◽  
Vol 35 (1) ◽  
pp. 1188
Author(s):  
Jong-Moo Kim ◽  
Joo-Won Lee ◽  
Young-Min Kim ◽  
Jai-Kyeong Kim ◽  
Byeong-Kwon Ju ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

scholarly journals Photoelectrical characteristics of UV organic thin-film transistor detectors

2017 ◽  
Vol 33 (2) ◽  
Author(s):  
Toan Thanh Dao
Keyword(s):  
Thin Film ◽  
Light Intensity ◽  
Gate Voltage ◽  
Gate Dielectric ◽  
Uv Light ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Transistor Channel

In this paper, a pentacene photo organic thin-film transistor (photoOTFT) was fabricated and characterized. The gate dielectric acted as a sensing layer thanks to it strongly absorbs UV light. Electrical behaviors of photoOTFT were measured under 365 nm UV illumination from the gate electrode side. The current in transistor channel was significantly enhanced by photoelectrons at interface of buffer/gate dielectric. Photosensitivity increased with the light intensity but decreased with the applied gate voltage. Meanwhile the photoresponsivity decreased with the light intensity and increased with the applied gate voltage. The transistor responses well with the pulse of light with many cycles of light-on and light-off were tested. The best photosensitivity, photoresponsivity, rising time and falling time parameters of the device were found to be about 104, 0.12 A/W, and 0.2 s, respectively. The obtained photoelectrical results suggest that the photoOTFT can be a good candidate for practical uses in low-cost UV optoelectronics.

Stability in OTFT Gas Sensors

2005 ◽  
Vol 871 ◽  
Author(s):  
Josephine B. Lee ◽  
Martin Heeney ◽  
Steve Tierney ◽  
Iain McCulloch ◽  
Amanda Murphy ◽  
...  
Keyword(s):  
Thin Film ◽  
Stress Response ◽  
Gas Sensors ◽  
Thin Film Transistor ◽  
Sensor Response ◽  
Continuous Operation ◽  
Degradation Behavior ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Active Materials

AbstractOrganic thin film transistor (OTFT) gas sensors fabricated with an array of different active materials are monitored for shifts in performance characteristics during continuous operation over many days in both inert and ambient environments. We analyze the different patterns of degradation behavior observed in different materials and discuss approaches to decoupling a device's sensor response from its stress response.

NUMERICAL ANALYSIS ON THE MECHANICAL PROPERTIES OF ORGANIC THIN FILM TRANSISTOR

2010 ◽  
Vol 24 (13) ◽  
pp. 1471-1474
Author(s):  
S. C. LEE ◽  
D. K. LEE ◽  
Y. G. SEOL ◽  
J. H. AHN ◽  
N. E. LEE ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Thermal Stress ◽  
Low Cost ◽  
Flexible Substrate ◽  
Thin Film Transistor ◽  
Channel Length ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Flexible Displays

The organic thin film transistor (OTFT) on flexible substrate electroplated electrodes has many advantages as in the fabrication of low cost sensors, e-paper, smart cards, and flexible displays. In this study, we simulated the mechanical and electrical characteristics of the OTFT with various voltage conditions by using COMSOL. The model consisting of a channel, source and drain was employed to investigate the temperature distribution and thermal stress concentration. The channel length is 40 µm and the voltage ranged between -20V and -40V. The OTFT was fabricated using pentacene as a semiconducting layer and electroplated Ni as a gate electrode. Mechanical properties of the fabricated OTFT were characterized by thermal stress which was predicted with the result of stress distribution.

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