Redistribution of Boron and Fluorine Atoms in BF2Implanted Silicon Wafers during Rapid Thermal Annealing

2003 ◽  
Vol 42 (Part 1, No. 3) ◽  
pp. 1123-1128 ◽  
Author(s):  
Woo Sik Yoo ◽  
Takashi Fukada ◽  
Tsuyoshi Setokubo ◽  
Kazuo Aizawa ◽  
Toshinori Ohsawa
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers

Depth profiles of oxygen precipitates in nitride-coated silicon wafers subjected to rapid thermal annealing

2013 ◽  
Vol 114 (4) ◽  
pp. 043520 ◽  
Author(s):  
V. V. Voronkov ◽  
R. Falster ◽  
TaeHyeong Kim ◽  
SoonSung Park ◽  
T. Torack
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Depth Profiles ◽  
Oxygen Precipitates

Anomalous Transient Diffusion of Ion Implanted Boron during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
D. L. Kwong ◽  
H. H. Tseng ◽  
R. Hance
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Low Dose ◽  
Silicon Wafers ◽  
Silicon Ions ◽  
Defect Evolution ◽  
Boron Implantation ◽  
Silicon Implantation ◽  
Ion Implanted

ABSTRACTEffects of defect evolution during rapid thermal annealing (RTA) on the anomalous diffusion of ion implanted boron have been studied by implanting silicon ions prior to boron implantation with doses ranging from 1 × 1014cm−2 to 1 × 1016cm−2 at energies ranging from 20 to 150 KeV into silicon wafers. Diffusion of boron atoms implanted into a Si preamorphized layer during RTA is found to be anomalous in nature, and the magnitude of boron displacement depends on the RTA temperature. While RTA of preamorphized samples at 1150°C shows an enhanced boron displacement compared to that in crystalline samples, a reduced displacement is observed in preamorphized samples annealed by RTA at 1000°C. In addition, low dose pre-silicon implantation enhances the anomalous displacement significantly, especially at high RTA temperatures (1 150°C). Finally, the anomalous diffusion is found to depend strongly on the defect evolution during RTA.

Vacancy Species Produced by Rapid Thermal Annealing of Silicon Wafers

2015 ◽  
Vol 242 ◽  
pp. 135-140 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Density Profiles ◽  
Cooling Stage ◽  
Czochralski Silicon ◽  
Self Diffusion ◽  
Oxygen Precipitation ◽  
Oxide Precipitate ◽  
Precipitate Density

Rapid thermal annealing (RTA) of Czochralski silicon wafers at around 1260°C installs a depth profile of some vacancy species. Subsequent oxygen precipitation in such wafers is vacancy-assisted. The data on RTA-installed vacancy profiles - and the corresponding precipitate density profiles - suggest that there is a slow-diffusing vacancy species (Vs) along with two fast-diffusing species: a Watkins vacancy (Vw) manifested in irradiation experiments and fast vacancy (Vf) responsible for the high-T vacancy contribution into self-diffusion. The Vs species are lost during cooling stage of RTA, and the loss seems to occur by conversion of Vs into Vf followed by a quick out-diffusion of Vf. A model based on this scenario provides a good fit to the reported profiles of oxide precipitate density in RTA wafers for different values of TRTA and different cooling rates.

Rapid Thermal Annealing of Silicon Using an Ultrahigh Power Arc Lamp

1983 ◽  
Vol 13 ◽  
Author(s):  
R. T. Hodgson ◽  
J. E. E. Baglin ◽  
A. E. Michel ◽  
S. Mader ◽  
J. C. Gelpey
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Tem Analysis ◽  
Wafer Temperature ◽  
Preliminary Results ◽  
Free Material

ABSTRACTWe have used an ultrahigh power, 100kW vortex cooled arc lamp to anneal As+ implant damage in <100> silicon wafers. When the wafer temperature was held above 1100°C for ∼1sec, TEM analysis indicated that the material was free of extended defects.The dopant diffused much more rapidly than would be expected from the usual models. However, preliminary results indicate that defect free material can be produced with dopant movement limited to ∼100Å.

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