Analysis of Leakage Current in Cu/SiO2/Si/Al Capacitors under Bias-Temperature Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.6384 ◽

2003 ◽

Vol 42 (Part 1, No. 10) ◽

pp. 6384-6389 ◽

Author(s):

Hirotaka Nishino ◽

Takuya Fukuda ◽

Hiroshi Yanazawa ◽

Hironori Matsunaga

Keyword(s):

Leakage Current ◽

Temperature Stress ◽

Bias Temperature Stress

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Reliability degradation of high density DRAM cell transistor junction leakage current induced by band-to-defect tunneling under the off-state bias-temperature stress

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167) ◽

10.1109/relphy.2001.922872 ◽

2002 ◽

Author(s):

Young Pil Kim ◽

Young Wook Park ◽

Joo Tae Moon ◽

S.U. Kim

Keyword(s):

Leakage Current ◽

Temperature Stress ◽

High Density ◽

Bias Temperature Stress

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TiN, TaN and WxN as diffusion barriers for Cu on SiO2: capacitance–voltage, leakage current, and triangular-voltage-sweep tests after bias temperature stress

Thin Solid Films ◽

10.1016/j.tsf.2003.10.111 ◽

2004 ◽

Vol 449 (1-2) ◽

pp. 158-165 ◽

Author(s):

Huseyin Kizil ◽

Christoph Steinbrüchel

Keyword(s):

Leakage Current ◽

Temperature Stress ◽

Diffusion Barriers ◽

Voltage Sweep ◽

Capacitance Voltage ◽

Bias Temperature Stress

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Thermal and Bias-Temperature Stress Induced Leakage Current Failure of Cu/BCB Single Damascene Integration

10.7567/ssdm.1998.a-6-6 ◽

1998 ◽

Author(s):

Sang U. Kim ◽

Taiheui Cho ◽

Paul Ho

Keyword(s):

Leakage Current ◽

Temperature Stress ◽

Stress Induced Leakage Current ◽

Bias Temperature Stress

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Junction leakage current degradation under the off-state bias-temperature stress: a new reliability assessment method for high-density DRAMs

IEEE Transactions on Device and Materials Reliability ◽

10.1109/7298.956703 ◽

2001 ◽

Vol 1 (2) ◽

pp. 104-108 ◽

Author(s):

Young Pil Kim ◽

Sung Tae Kim ◽

Joo Tae Moon ◽

S.U. Kim

Keyword(s):

Leakage Current ◽

Temperature Stress ◽

Reliability Assessment ◽

Assessment Method ◽

High Density ◽

Bias Temperature Stress

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Characteristics of leakage current in the dielectric layer due to Cu migration during bias temperature stress

Journal of Applied Physics ◽

10.1063/1.2973154 ◽

2008 ◽

Vol 104 (4) ◽

pp. 044511 ◽

Author(s):

Sang-Soo Hwang ◽

Sung-Yup Jung ◽

Young-Chang Joo

Keyword(s):

Leakage Current ◽

Temperature Stress ◽

Dielectric Layer ◽

Cu Migration ◽

Bias Temperature Stress

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Leakage current conduction, hole injection, and time-dependent dielectric breakdown ofn-4H-SiC MOS capacitors during positive bias temperature stress

Journal of Applied Physics ◽

10.1063/1.4973674 ◽

2017 ◽

Vol 121 (3) ◽

pp. 034501 ◽

Author(s):

Piyas Samanta ◽

Krishna C. Mandal

Keyword(s):

Leakage Current ◽

Temperature Stress ◽

Dielectric Breakdown ◽

Time Dependent ◽

Hole Injection ◽

Positive Bias ◽

Mos Capacitors ◽

Time Dependent Dielectric Breakdown ◽

Current Conduction ◽

Bias Temperature Stress

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Stress-induced leakage current and defect generation in nFETs with HfO2/TiN gate stacks during positive-bias temperature stress

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173301 ◽

2009 ◽

Author(s):

Eduard Cartier ◽

Andreas Kerber

Keyword(s):

Leakage Current ◽

Temperature Stress ◽

Positive Bias ◽

Gate Stacks ◽

Defect Generation ◽

Stress Induced Leakage Current ◽

Bias Temperature Stress

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Leakage current degradation and carrier conduction mechanisms for Cu/BCB damascene process under bias-temperature stress

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) ◽

10.1109/relphy.1999.761626 ◽

2003 ◽

Author(s):

S.U. Kim ◽

T. Cho ◽

P.S. Ho

Keyword(s):

Leakage Current ◽

Temperature Stress ◽

Damascene Process ◽

Conduction Mechanisms ◽

Bias Temperature Stress

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Drain bias dependent bias temperature stress instability in a-Si:H TFT

Solid-State Electronics ◽

10.1016/j.sse.2008.11.011 ◽

2009 ◽

Vol 53 (2) ◽

pp. 225-233 ◽

Author(s):

Z. Tang ◽

M.S. Park ◽

S.H. Jin ◽

C.R. Wie

Keyword(s):

Temperature Stress ◽

Bias Temperature Stress

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Electron Spin Resonance Observation of Bias-Temperature Stress-Induced Interface Defects at NO/N$_{2}$O-Annealed Chemical-Vapor-Deposition SiO$_{2}$/(100) p-Si Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.114101 ◽

2011 ◽

Vol 50 ◽

pp. 114101

Author(s):

Hiroyuki Mitoh ◽

Shinichiro Ando ◽

Hayato Miyagawa ◽

Shyun Koshiba ◽

Ziyuan Liu ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Electron Spin Resonance ◽

Temperature Stress ◽

Electron Spin ◽

Vapor Deposition ◽

Chemical Vapor ◽

Si Substrates ◽

Interface Defects ◽

Spin Resonance ◽

Bias Temperature Stress

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