Characteristics of Cell Latch and Leakage Current at Standby State in 6-T Low-Power Static Random Access Memory (SRAM) Device

2003 ◽  
Vol 42 (Part 2, No. 2B) ◽  
pp. L151-L153 ◽  
Author(s):  
Sang-Hun Seo ◽  
Won-Suk Yang ◽  
Seug-Gyu Kim ◽  
Kyeong-Tae Kim
2017 ◽  
Vol 13 (1) ◽  
pp. 47-59
Author(s):  
Pooran Singh ◽  
B. S. Reniwal ◽  
V. Vijayvargiya ◽  
V. Sharma ◽  
S. K. Vishvakarma

2003 ◽  
Vol 43 (5) ◽  
pp. 802-806
Author(s):  
Joo Young Kim ◽  
Ju Youn Kim ◽  
Hyeongtag Jeon ◽  
Sung Jin Kim ◽  
Yangdo Kim ◽  
...  

2014 ◽  
Vol 2014 (6) ◽  
pp. 259-264 ◽  
Author(s):  
Yasuhiro Takahashi ◽  
Nazrul Anuar Nayan ◽  
Toshikazu Sekine ◽  
Michio Yokoyama

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