Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1941 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 1941-1943 ◽

Author(s):

Seung-Chul Lee ◽

Jin-Cherl Her ◽

Sang-Myeon Han ◽

Kwang-Seok Seo ◽

Min-Koo Han

Keyword(s):

Electron Mobility ◽

Electrostatic Discharge ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.7939 ◽

2004 ◽

Vol 43 (12) ◽

pp. 7939-7943 ◽

Author(s):

Makoto Miyoshi ◽

Masahiro Sakai ◽

Subramaniam Arulkumaran ◽

Hiroyasu Ishikawa ◽

Takashi Egawa ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates

10.7567/ssdm.2001.c-1-2 ◽

2001 ◽

Author(s):

S. Arulkumaran ◽

T. Egawa ◽

H. Ishikawa ◽

T. Jimbo

Keyword(s):

Silicon Carbide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Comparative Analysis of Nano-Scale Structural and Electrical Properties in AlGaN/GaN High Electron Mobility Transistors on SiC and Sapphire Substrates

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2013.7631 ◽

2013 ◽

Vol 13 (10) ◽

pp. 7083-7088 ◽

Author(s):

Cong Wang ◽

Sung-Jin Cho ◽

Nam-Young Kim

Keyword(s):

Comparative Analysis ◽

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors ◽

Structural And Electrical Properties

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Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.8435 ◽

2005 ◽

Vol 44 (12) ◽

pp. 8435-8440 ◽

Author(s):

Kenji Shiojima ◽

Takashi Makimura ◽

Tetsuya Suemitsu ◽

Naoteru Shigekawa

Keyword(s):

Epitaxial Layer ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Crystal Quality ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4963064 ◽

2016 ◽

Vol 34 (5) ◽

pp. 051208 ◽

Author(s):

Fan Ren ◽

Stephen J. Pearton ◽

Shihyun Ahn ◽

Yi-Hsuan Lin ◽

Francisco Machuca ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Electrostatic discharge effects in AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.1633018 ◽

2003 ◽

Vol 83 (22) ◽

pp. 4655-4657 ◽

Author(s):

J. Kuzmı́k ◽

D. Pogany ◽

E. Gornik ◽

P. Javorka ◽

P. Kordoš

Keyword(s):

Electron Mobility ◽

Electrostatic Discharge ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications

Journal of Semiconductors ◽

10.1088/1674-4926/37/4/044007 ◽

2016 ◽

Vol 37 (4) ◽

pp. 044007 ◽

Author(s):

Xubo Song ◽

Yuanjie Lü ◽

Guodong Gu ◽

Yuangang Wang ◽

Xin Tan ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Ka Band ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

Solid-State Electronics ◽

10.1016/j.sse.2005.08.014 ◽

2005 ◽

Vol 49 (10) ◽

pp. 1632-1638 ◽

Author(s):

S. Arulkumaran ◽

T. Egawa ◽

H. Ishikawa

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated with Indium-Tin-Oxide Electrodes

IEEE Electron Device Letters ◽

10.1109/led.2020.3048009 ◽

2020 ◽

pp. 1-1

Author(s):

Chih-Yao Chang ◽

Chun-Ta Hsu ◽

Yao-Luen Shen ◽

Tian-Li Wu ◽

Wei-Hung Kuo ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Oxide Electrodes

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