AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications

2016 ◽  
Vol 37 (4) ◽  
pp. 044007 ◽  
Author(s):  
Xubo Song ◽  
Yuanjie Lü ◽  
Guodong Gu ◽  
Yuangang Wang ◽  
Xin Tan ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Ka Band ◽  
Sapphire Substrates ◽  
Electron Mobility Transistors

scholarly journals Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications

Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 222 ◽  
Author(s):  
Y. C. Lin ◽  
S. H. Chen ◽  
P. H. Lee ◽  
K. H. Lai ◽  
T. J. Huang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Power Density ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Superior Performance ◽  
Copper Metallization ◽  
High Electron ◽  
High Electron Mobility ◽  
Ka Band ◽  
Electron Mobility Transistors

Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. With a thick copper metallization layer of 6.8 μm adopted, the device exhibited a high output power density of 8.2 W/mm and a power-added efficiency (PAE) of 26% at 38 GHz. Such superior performance is mainly attributed to the substantial reduction of the source and drain resistance of the device. In addition to improvement in the Radio Frequency (RF) performance, the successful integration of the thick copper metallization in the device technology further reduces the manufacturing cost, making it extremely promising for future fifth-generation mobile communication system applications at millimeter-wave frequencies.

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