Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates

Mapping Intimacies ◽

10.7567/ssdm.2001.c-1-2 ◽

2001 ◽

Author(s):

S. Arulkumaran ◽

T. Egawa ◽

H. Ishikawa ◽

T. Jimbo

Keyword(s):

Silicon Carbide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.7939 ◽

2004 ◽

Vol 43 (12) ◽

pp. 7939-7943 ◽

Author(s):

Makoto Miyoshi ◽

Masahiro Sakai ◽

Subramaniam Arulkumaran ◽

Hiroyasu Ishikawa ◽

Takashi Egawa ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Comparative Analysis of Nano-Scale Structural and Electrical Properties in AlGaN/GaN High Electron Mobility Transistors on SiC and Sapphire Substrates

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2013.7631 ◽

2013 ◽

Vol 13 (10) ◽

pp. 7083-7088 ◽

Author(s):

Cong Wang ◽

Sung-Jin Cho ◽

Nam-Young Kim

Keyword(s):

Comparative Analysis ◽

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors ◽

Structural And Electrical Properties

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Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1941 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 1941-1943 ◽

Author(s):

Seung-Chul Lee ◽

Jin-Cherl Her ◽

Sang-Myeon Han ◽

Kwang-Seok Seo ◽

Min-Koo Han

Keyword(s):

Electron Mobility ◽

Electrostatic Discharge ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Performance, Reliability, and Manufacturability of AlGaN/GaN High Electron Mobility Transistors on Silicon Carbide Substrates

ECS Transactions ◽

10.1149/1.2357206 ◽

2019 ◽

Vol 3 (5) ◽

pp. 161-179 ◽

Author(s):

Jeffrey D. Brown ◽

Shawn Gibb ◽

Johnathan McKenna ◽

Matthew Poulton ◽

Sangmin Lee ◽

...

Keyword(s):

Silicon Carbide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Performance, Reliability, and Manufacturability of AlGaN/GaN High Electron Mobility Transistors on Silicon Carbide Substrates

ECS Meeting Abstracts ◽

10.1149/ma2006-02/32/1545 ◽

2006 ◽

Keyword(s):

Silicon Carbide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.8435 ◽

2005 ◽

Vol 44 (12) ◽

pp. 8435-8440 ◽

Author(s):

Kenji Shiojima ◽

Takashi Makimura ◽

Tetsuya Suemitsu ◽

Naoteru Shigekawa

Keyword(s):

Epitaxial Layer ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Crystal Quality ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4963064 ◽

2016 ◽

Vol 34 (5) ◽

pp. 051208 ◽

Author(s):

Fan Ren ◽

Stephen J. Pearton ◽

Shihyun Ahn ◽

Yi-Hsuan Lin ◽

Francisco Machuca ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications

Journal of Semiconductors ◽

10.1088/1674-4926/37/4/044007 ◽

2016 ◽

Vol 37 (4) ◽

pp. 044007 ◽

Author(s):

Xubo Song ◽

Yuanjie Lü ◽

Guodong Gu ◽

Yuangang Wang ◽

Xin Tan ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Ka Band ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.l1081 ◽

2001 ◽

Vol 40 (Part 2, No. 10B) ◽

pp. L1081-L1083 ◽

Author(s):

Subramaniam Arulkumaran ◽

Takashi Egawa ◽

Hiroyasu Ishikawa ◽

Takashi Jimbo

Keyword(s):

Silicon Carbide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Silicon Carbide Substrate ◽

High Transconductance

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Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach

Semiconductor Science and Technology ◽

10.1088/1361-6641/abc8ad ◽

2020 ◽

Vol 36 (1) ◽

pp. 014008

Author(s):

A El-Helou ◽

Y Cui ◽

M J Tadjer ◽

T J Anderson ◽

D Francis ◽

...

Keyword(s):

Silicon Carbide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Thermal Characterization ◽

High Electron ◽

High Electron Mobility ◽

Modeling Approach ◽

Electron Mobility Transistors ◽

Silicon Silicon

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