Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4963064 ◽

2016 ◽

Vol 34 (5) ◽

pp. 051208 ◽

Author(s):

Fan Ren ◽

Stephen J. Pearton ◽

Shihyun Ahn ◽

Yi-Hsuan Lin ◽

Francisco Machuca ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.2919163 ◽

2008 ◽

Vol 103 (9) ◽

pp. 093529 ◽

Author(s):

A. L. Corrion ◽

C. Poblenz ◽

F. Wu ◽

J. S. Speck

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

Morphological Properties ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.7939 ◽

2004 ◽

Vol 43 (12) ◽

pp. 7939-7943 ◽

Author(s):

Makoto Miyoshi ◽

Masahiro Sakai ◽

Subramaniam Arulkumaran ◽

Hiroyasu Ishikawa ◽

Takashi Egawa ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates

10.7567/ssdm.2001.c-1-2 ◽

2001 ◽

Author(s):

S. Arulkumaran ◽

T. Egawa ◽

H. Ishikawa ◽

T. Jimbo

Keyword(s):

Silicon Carbide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Growth and characterization of iron-doped semi-insulating InP buffer layers for Al-free GaInP/GaInAs high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.3516490 ◽

2010 ◽

Vol 108 (11) ◽

pp. 114502 ◽

Author(s):

O. Ostinelli ◽

A. R. Alt ◽

R. Lövblom ◽

C. R. Bolognesi

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Comparative Analysis of Nano-Scale Structural and Electrical Properties in AlGaN/GaN High Electron Mobility Transistors on SiC and Sapphire Substrates

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2013.7631 ◽

2013 ◽

Vol 13 (10) ◽

pp. 7083-7088 ◽

Author(s):

Cong Wang ◽

Sung-Jin Cho ◽

Nam-Young Kim

Keyword(s):

Comparative Analysis ◽

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors ◽

Structural And Electrical Properties

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Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

physica status solidi (a) ◽

10.1002/pssa.201900760 ◽

2020 ◽

Vol 217 (7) ◽

pp. 1900760

Author(s):

Eric Frayssinet ◽

Luan Nguyen ◽

Marie Lesecq ◽

Nicolas Defrance ◽

Maxime Garcia Barros ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Vapor Phase Epitaxy ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1941 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 1941-1943 ◽

Author(s):

Seung-Chul Lee ◽

Jin-Cherl Her ◽

Sang-Myeon Han ◽

Kwang-Seok Seo ◽

Min-Koo Han

Keyword(s):

Electron Mobility ◽

Electrostatic Discharge ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Sapphire Substrates ◽

Electron Mobility Transistors

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Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors

IEEE Electron Device Letters ◽

10.1109/led.2020.3030341 ◽

2020 ◽

Vol 41 (12) ◽

pp. 1754-1757

Author(s):

Filip Wach ◽

Michael J. Uren ◽

Benoit Bakeroot ◽

Ming Zhao ◽

Stefaan Decoutere ◽

...

Keyword(s):

Charge Transport ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Low Field ◽

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Perhydropolysilazane spin-on-dielectric passivation buffer layers for AlGaN/GaN high-electron mobility transistors

Electronics Letters ◽

10.1049/el.2012.3363 ◽

2012 ◽

Vol 48 (23) ◽

pp. 1503 ◽

Author(s):

P.S. Ko ◽

M. Han ◽

S.D. Kim

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1520 ◽

2004 ◽

Vol 43 (No. 12A) ◽

pp. L1520-L1523 ◽

Author(s):

Patrick Waltereit ◽

Christiane Poblenz ◽

Siddharth Rajan ◽

Feng Wu ◽

Umesh K. Mishra ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Structural Properties ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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