Analysis of Static and Dynamic Performance of Short-Channel Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors for Improved Cutoff Frequency

Abhinav Kranti; Tsung Ming Chung; Jean-Pierre Raskin

doi:10.1143/jjap.44.2340

Analysis of Static and Dynamic Performance of Short-Channel Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors for Improved Cutoff Frequency

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.2340 ◽

2005 ◽

Vol 44 (4B) ◽

pp. 2340-2346 ◽

Cited By ~ 30

Author(s):

Abhinav Kranti ◽

Tsung Ming Chung ◽

Jean-Pierre Raskin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Dynamic Performance ◽

Cutoff Frequency ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel

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Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.77 ◽

2014 ◽

pp. 77-101

Author(s):

S. Ghosh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted

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Consideration of Performance Limitation of Sub-100-nm Double-Gate Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l1096 ◽

2002 ◽

Vol 41 (Part 2, No. 10A) ◽

pp. L1096-L1098 ◽

Cited By ~ 2

Author(s):

Shin-ichiro Yanagi ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Performance Limitation

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Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4916 ◽

1993 ◽

Vol 32 (Part 1, No. 11A) ◽

pp. 4916-4922 ◽

Cited By ~ 14

Author(s):

Kunihiro Suzuki ◽

Shigeo Satoh ◽

Tetsu Tanaka ◽

Satoshi Ando

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Analytical Models ◽

Double Gate

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A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Cited By ~ 20

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Dual Material

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New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.074304 ◽

2010 ◽

Vol 49 (7) ◽

pp. 074304 ◽

Cited By ~ 2

Author(s):

Te-Kuang Chiang

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted ◽

Dual Material

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Modeling of Subthreshold Swing and Analysis of Short-Channel Effects in Double-Gate Metal Oxide Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c054 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C054

Author(s):

Kenta Ishimura ◽

Norio Sadachika ◽

Mitiko Miura-Mattausch

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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An Efficient Quantum-Based Model for the Threshold Voltage of Thin Film Double Gate/Silicon on Insulator Silicon Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.024304 ◽

2010 ◽

Vol 49 (2) ◽

pp. 024304 ◽

Cited By ~ 1

Author(s):

Saeed Mohammadi ◽

Ali Afzali-Kusha

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate

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Mobility Degradation in (110)-Oriented Ultrathin-Body Double-Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Silicon-on-Insulator Thickness of Less than 5 nm

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.041302 ◽

2010 ◽

Vol 49 (4) ◽

pp. 041302 ◽

Cited By ~ 1

Author(s):

Ken Shimizu ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Mobility Degradation ◽

P Type

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Empirical Models of Phonon-Limited Electron Mobility for Ultrathin-Body Single-Gate and Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with (001) or (111) Si Surface Channel

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3463 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3463-3470

Author(s):

Tsuyoshi Yamamura ◽

Shingo Sato ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Empirical Models ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate

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Short-Channel Characteristics of Variable-Body-Factor Fully-Depleted Silicon-On-Insulator Metal–Oxide–Semiconductor-Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.3885 ◽

2005 ◽

Vol 44 (6A) ◽

pp. 3885-3888 ◽

Cited By ~ 5

Author(s):

Tetsu Ohtou ◽

Toshiharu Nagumo ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted ◽

Channel Characteristics

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