Plasma-Enhanced Chemical Vapor Deposition Growth of Fluorinated Amorphous Carbon Thin Films Using C4F8and Si2H6/He for Low-Dielectric-Constant Intermetallic-Layer Dielectrics

2005 ◽  
Vol 44 (7A) ◽  
pp. 4886-4890 ◽  
Author(s):  
Howoon Kim ◽  
Jang-Kyoo Shin ◽  
Dae-Hyuk Kwon ◽  
Hwa-Il Seo ◽  
Gil S. Lee
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Intermetallic Layer ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Chemical Vapor Deposition Growth ◽  
Low Dielectric

Low Dielectric Constant, High Temperature Stable Copolymer Thin Films by Room Temperature Chemical Vapor Deposition

1994 ◽  
Vol 343 ◽  
Author(s):  
Justin F. Gaynor ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Conformal Coatings

ABSTRACTPolyxylylene thin films grown by the chemical vapor deposition (CVD) process have long been utilized to achieve uniform, pinhole-free conformal coatings. They have recently been cited as possible low dielectric constant films for intermetal layers in high-speed ICs. Homopolymer films are highly crystalline and have a glass transition temperature around room temperature. We have demonstrated that room temperature copolymerization with previously untested comonomers can be achieved during the CVD process. Copolymerizing chloro-p-xylylene with perfluorooctyl methacrylate results in the dielectric constant at optical frequencies being lowered from 2.68 to 2.19. Copolymerizing p-xylylene with vinylbiphenyl resulted in films which increase the temperature at which oxidative scission occurs from 320 to 450C. Copolymerizing p-xylylene with 9-vinylanthracene resulted in a brittle, yellow film.

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