Endurance and Data Retention Improvement of Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Semiconductor Memory Devices with Partially Bottom-Silicon-Rich Nitride Structure

2005 ◽  
Vol 44 (9A) ◽  
pp. 6380-6384 ◽  
Author(s):  
Hua-Ching Chien ◽  
Kuo-Hong Wu ◽  
Jui-Wen Chang ◽  
Chin-Hsing Kao ◽  
Tung-Sheng Chen
Keyword(s):  
Silicon Oxide ◽  
Memory Devices ◽  
Data Retention ◽  
Semiconductor Memory ◽  
Nonvolatile Semiconductor Memory ◽  
Nitride Oxide

70 nm Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory Devices Using Fowler-Nordheim Programming and Hot Hole Erase Method

2004 ◽  
Vol 43 (4B) ◽  
pp. 2207-2210 ◽  
Author(s):  
Soodoo Chae ◽  
Changju Lee ◽  
Juhyung Kim ◽  
Sukkang Sung ◽  
Jaeseong Sim ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Silicon Oxide ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Nitride Oxide

Novel junctionless silicon–oxide–nitride–oxide–silicon memory devices with field-enhanced poly-Si nanowire structure

2015 ◽  
Vol 54 (8) ◽  
pp. 084201
Author(s):  
Chia-Hsin Chou ◽  
Wei-Sheng Chan ◽  
Chun-Yu Wu ◽  
I-Che Lee ◽  
Ta-Chuan Liao ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Memory Devices ◽  
Si Nanowire ◽  
Nitride Oxide ◽  
Nanowire Structure
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