Simulation of Nanoscale Two-Bit Not-And-type Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory Devices with a Separated Double-Gate Fin Field Effect Transistor Structure Containing Different Tunneling Oxide Thicknesses

2009 ◽  
Vol 48 (6) ◽  
pp. 06FD12
Author(s):  
Se Woong Oh ◽  
Sang Su Park ◽  
Dong Hun Kim ◽  
Hyun Woo Kim ◽  
Tae Whan Kim
Keyword(s):  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Oxide ◽  
Memory Devices ◽  
Double Gate ◽  
Transistor Structure ◽  
Nonvolatile Memory Devices ◽  
Effect Transistor ◽  
Nitride Oxide

Pentafluorosulfanylated polymers as electrets in nonvolatile organic field-effect transistor memory devices

2019 ◽  
Vol 7 (26) ◽  
pp. 7865-7871 ◽  
Author(s):  
Guoxian Zhang ◽  
Yu-Jung Lee ◽  
Prabhat Gautam ◽  
Chia-Chi Lin ◽  
Cheng-Liang Liu ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Storage ◽  
Memory Devices ◽  
Organic Field Effect Transistor ◽  
Nonvolatile Memory Devices ◽  
Effect Transistor ◽  
Styrenic Polymer ◽  
Polymer Electrets

Styrenic polymer electrets with pentafluorosulfanylated sidechains demonstrate their charge-storage capabilities in organic nonvolatile memory devices.

Nonvolatile Organic Field-Effect Transistor Memory from Pyrene-fused Azaindacene Regioisomers

2021 ◽  
Author(s):  
Duan-Wu Liu ◽  
Yamin Zhang ◽  
Xiangyang Li ◽  
Qi Xiao ◽  
Wenjing Sun ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Materials ◽  
Memory Devices ◽  
Organic Field Effect Transistor ◽  
Nonvolatile Memory Devices ◽  
Effect Transistor ◽  
New Generation

Nonvolatile memory devices based on organic materials are promising for new generation of portable or flexible electronics. Herein, we designed and synthesized two pyrene-fused azaindacene configurational isomers, syn-B2IPIO and anti-B2IPIO,...

One-step fabrication of CdS:Mo–CdMoO4core–shell nanoribbons for nonvolatile memory devices with high resistance switching

2017 ◽  
Vol 5 (25) ◽  
pp. 6156-6162 ◽  
Author(s):  
Ni Zheng ◽  
Zhibin Shao ◽  
Feifei Xia ◽  
Tianhao Jiang ◽  
Xiaofeng Wu ◽  
...  
Keyword(s):  
High Resistance ◽  
Nonvolatile Memory ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Core Shell ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
One Step ◽  
Effect Transistor

A one-step fabrication of CdS:Mo–CdMoO4core–shell nanoribbons (NR) was achieved for applications in high performance nano-field-effect transistor (FET)-based nonvolatile memory (NVM) device.

70 nm Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory Devices Using Fowler-Nordheim Programming and Hot Hole Erase Method

2004 ◽  
Vol 43 (4B) ◽  
pp. 2207-2210 ◽  
Author(s):  
Soodoo Chae ◽  
Changju Lee ◽  
Juhyung Kim ◽  
Sukkang Sung ◽  
Jaeseong Sim ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Silicon Oxide ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Nitride Oxide

Double-Gate Nanowire Field Effect Transistor for a Biosensor

Nano Letters ◽  
2010 ◽  
Vol 10 (8) ◽  
pp. 2934-2938 ◽  
Author(s):  
Jae-Hyuk Ahn ◽  
Sung-Jin Choi ◽  
Jin-Woo Han ◽  
Tae Jung Park ◽  
Sang Yup Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Double Gate ◽  
Effect Transistor
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