Capacitance Measurement in Organic Thin-Film Device with Internal Charge Separation Zone

2005 ◽  
Vol 44 (No. 33) ◽  
pp. L1059-L1062 ◽  
Author(s):  
Masaya Terai ◽  
Katsuhiko Fujita ◽  
Tetsuo Tsutsui
2005 ◽  
Vol 5 (4) ◽  
pp. 341-344 ◽  
Author(s):  
Masaya Terai ◽  
Daisuke Kumaki ◽  
Takeshi Yasuda ◽  
Katsuhiko Fujita ◽  
Tetsuo Tsutsui

2009 ◽  
Vol 38 (12) ◽  
pp. 1160-1161 ◽  
Author(s):  
Takeo Suga ◽  
Shunya Takeuchi ◽  
Takanori Ozaki ◽  
Miki Sakata ◽  
Kenichi Oyaizu ◽  
...  

2006 ◽  
Vol 45 (4B) ◽  
pp. 3754-3757 ◽  
Author(s):  
Masaya Terai ◽  
Katsuhiko Fujita ◽  
Tetsuo Tsutsui

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Atxabal ◽  
T. Arnold ◽  
S. Parui ◽  
S. Hutsch ◽  
E. Zuccatti ◽  
...  

2018 ◽  
Vol 20 (17) ◽  
pp. 12193-12199 ◽  
Author(s):  
Azusa Muraoka ◽  
Mikiya Fujii ◽  
Kenji Mishima ◽  
Hiroki Matsunaga ◽  
Hiroaki Benten ◽  
...  

Herein, we theoretically and experimentally investigated the mechanisms of charge separation processes of organic thin-film solar cells.


2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui

2013 ◽  
Vol E96.C (11) ◽  
pp. 1360-1366 ◽  
Author(s):  
Ichiro FUJIEDA ◽  
Tse Nga NG ◽  
Tomoya HOSHINO ◽  
Tomonori HANASAKI

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