Trivalued Memory Circuit Using Metal-Oxide-Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process
2006 ◽
Vol 45
(No. 36)
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pp. L977-L979
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2021 ◽
Vol 134
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pp. 106046
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2020 ◽
Vol 21
(3)
◽
pp. 339-347
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1997 ◽
Vol 9
(8)
◽
pp. 1143-1145
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2010 ◽
Vol 49
(4)
◽
pp. 04DE16
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Keyword(s):