Study of Drain Alloy for Antimony Substrate Vertical High Voltage Power Metal Oxide Semiconductor Field Effect Transistors

2008 ◽  
Vol 47 (4) ◽  
pp. 2122-2123
Author(s):  
Chien-Nan Liao ◽  
Feng-Tso Chien ◽  
Chii-Wen Chen ◽  
Yao-Tsung Tsai
Keyword(s):  
Metal Oxide ◽  
High Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs

2014 ◽  
Vol 778-780 ◽  
pp. 943-946
Author(s):  
Yuichiro Nanen ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Surface Field ◽  
Reduced Surface

Characteristics of high-voltage lateral silicon carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) with various reduced surface field (RESURF) structures were simulated. Breakdown voltage was enhanced from 5300 V for single-zone RESURF to 7400 V for two-zone, and to 7600 V for quasi-modulated RESURF MOSFETs.

Sign in / Sign up

Export Citation Format

Share Document