Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs
2014 ◽
Vol 778-780
◽
pp. 943-946
Keyword(s):
Characteristics of high-voltage lateral silicon carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) with various reduced surface field (RESURF) structures were simulated. Breakdown voltage was enhanced from 5300 V for single-zone RESURF to 7400 V for two-zone, and to 7600 V for quasi-modulated RESURF MOSFETs.
2008 ◽
Vol 47
(7)
◽
pp. 5409-5416
◽
2012 ◽
Vol 51
◽
pp. 04DP04
◽
Keyword(s):
2006 ◽
pp. 1011-1014
Keyword(s):
Keyword(s):
2005 ◽
pp. 593-596
Keyword(s):
2021 ◽
Vol 16
(5)
◽
pp. 738-743