Effect of Fullerene Concentration on Flat-Band Voltage Shift of Capacitance–Voltage Curve in Organic Memory Devices Fabricated Using Hybrid Poly(4-vinyl phenol) Active Layer Containing Fullerene

2008 ◽  
Vol 47 (6) ◽  
pp. 5083-5085 ◽  
Author(s):  
Hyuk Joo Kim ◽  
Jae Hun Jung ◽  
Jung Hun Ham ◽  
Tae Whan Kim
Keyword(s):  
Active Layer ◽  
Flat Band ◽  
Memory Devices ◽  
Flat Band Voltage ◽  
Organic Memory ◽  
Organic Memory Devices ◽  
Fullerene Concentration ◽  
Voltage Curve ◽  
Capacitance Voltage ◽  
Vinyl Phenol

scholarly journals Overview of organic memory devices

2009 ◽  
Vol 367 (1905) ◽  
pp. 4141-4157 ◽  
Author(s):  
D. Prime ◽  
S. Paul
Keyword(s):  
High Performance ◽  
Storage Capacity ◽  
Memory Devices ◽  
Future Directions ◽  
Organic Memory ◽  
Industrial Implementation ◽  
Organic Memory Devices ◽  
Different Types ◽  
Charging Mechanism ◽  
Memory Structures

The demand for more efficient and faster memory structures is greater today than ever before. The efficiency of memory structures is measured in terms of storage capacity and the speed of functioning. However, the production cost of such configurations is the natural constraint on how much can be achieved. Organic memory devices (OMDs) provide an ideal solution, in being inexpensive, and at the same time promising high performance. However, all OMDs reported so far suffer from multiple drawbacks that render their industrial implementation premature. This article introduces the different types of OMDs, discusses the progress in this field over the last 9 years and invokes conundrums that scholars of this field are currently faced with, such as questions about the charging mechanism and stability of devices, contradictions in the published work and some future directions.

Fabrication and Characterisation of MIS Organic Memory Devices

2008 ◽  
pp. 474-479
Author(s):  
Mohammed Fadhil Mabrook ◽  
Daniel Kolb ◽  
Christopher Pearson ◽  
D.A. Zeze ◽  
M.C. Petty
Keyword(s):  
Memory Devices ◽  
Organic Memory ◽  
Organic Memory Devices

Investigation of Time-Dependent Resistive Switching Behaviors of Unipolar Nonvolatile Organic Memory Devices

2018 ◽  
Vol 28 (35) ◽  
pp. 1801162 ◽  
Author(s):  
Woocheol Lee ◽  
Youngrok Kim ◽  
Younggul Song ◽  
Kyungjune Cho ◽  
Daekyoung Yoo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Time Dependent ◽  
Memory Devices ◽  
Organic Memory ◽  
Organic Memory Devices
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