Analysis of the Method for the Flat-Band Voltage Determination on the Capacitance-Voltage Characteristic Inflection Point

2019 ◽  
Author(s):  
Vladimir G. Polovinkin ◽  
Nikita I. Lysenko
Keyword(s):  
Inflection Point ◽  
Voltage Characteristic ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Capacitance Voltage

Radiation Damage of SiO2/Si By Energetic Neutral Beam and Vjuv Photons

1988 ◽  
Vol 128 ◽  
Author(s):  
Tatsumi Mizutani ◽  
Shigeru Nishimatsu ◽  
Takashi Yunogami
Keyword(s):  
Kinetic Energy ◽  
Radiation Damage ◽  
Vacuum Ultraviolet ◽  
Ion Beam ◽  
Generation Mechanism ◽  
Neutral Beam ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Capacitance Voltage

ABSTRACTTo clarify the generation mechanism of radiation damage induced in SiO2/Si by plasma processes, effects of three different beams, i.e., ions, neutrals and vacuum ultraviolet (VUV) photons have been evaluated independently. The radiation damage caused by these energetic bombardments has been measured by capacitance-voltage (C-V) measurements. These reveal that bombardments with a 250 eV Neo neutral beam generate + far less flat-band voltage shifts ( ΔVFB) than those with a Ne+ ion beam of equal kinetic energy. This c n be interpreted in terms of the differences in charge build-up and in hole production upon the incidence of these particles. VUV photons produced in the plasma are also responsible for large ΔVFB.

Study on NO Passivation on the Near Interface Electron and Hole Traps of n-Type 4H-SiC MOS Capacitors by Ultraviolet Light

2018 ◽  
Vol 924 ◽  
pp. 449-452 ◽  
Author(s):  
Yi Fan Jia ◽  
Hong Liang Lv ◽  
Xiao Yan Tang ◽  
Qing Wen Song ◽  
Yi Men Zhang ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Ultraviolet Light ◽  
Annealed Sample ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Mos Capacitors ◽  
Bias Stress ◽  
Mos Devices ◽  
Capacitance Voltage ◽  
Electron And Hole Traps

The characteristics of near interface electron and hole traps in n-type 4H-SiC MOS capacitors with and without nitric oxide (NO) passivation have been systematically investigated. The hysteresis of the bidirectional capacitance-voltage (C-V) and the shift of flat band voltage (Vfb) caused by bias stress (BS) with and without ultraviolet light (UVL) irradiation are used for studying the influence of near interface electron traps (NIETs) and near interface hole traps (NIHTs). Compared with Ar annealed process, NO passivation can effectively reduce the density of NIETs, but induce excess NIHTs in the SiC MOS devices. What’s worse is that part of the trapped hole cannot be released easily from the NIHTs in the NO annealed sample, which may act as the positive fixed charge and induce the negative shift of threshold voltage.

scholarly journals The Effect of Silicon Orientation on Thickness and Chemical Bonding Configuration of SiOxNy Thin Films

2013 ◽  
Vol 19 ◽  
pp. 1-9 ◽  
Author(s):  
M.M. Ismael
Keyword(s):  
Thin Films ◽  
Chemical Bonding ◽  
Wave Number ◽  
Flat Band ◽  
Silicon Substrates ◽  
Flat Band Voltage ◽  
Absorption Bands ◽  
Bonding Configuration ◽  
Two Samples ◽  
Capacitance Voltage

Fourier Transform Infrared (FTIR) Spectroscopy and Capacitance-Voltage measurements are used to characterize the chemical bonding configuration and crystallographic orientations for SiOxNy thin films grown by glass assisted CO2 laser. FTIR spectra detected the Si-O and Si-N strongest absorption bands are close to each other at wave number in the range (700-1000 cm-1) depending on silicon substrates, and Si-O stretching bond at wave number around (~1088.285 cm-1) with a FWHM of 73.863 cm-1 for the two samples, the presences of hydrogen impurities like Si-H and N-H in the films were also identified and calculated. From C-V measurement film thickness were calculated and found to be 19.2 and 17.2 nm for SiOxNy/Si(111) and SiOxNy/Si(100) respectively. From the flat band voltage of -5.4 and -1.3 measured the two samples, their interface trap densities were found to be 1.4 × 1013 and 1.57 × 1013 ev-1·cm-2 respectively.

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