Extended Scalability of HfON/SiON Gate Stack Down to 0.57 nm Equivalent Oxide Thickness with High Carrier Mobility by Post-Deposition Annealing

2009 ◽  
Vol 48 (4) ◽  
pp. 04C004 ◽  
Author(s):  
Dai Ishikawa ◽  
Satoshi Kamiyama ◽  
Etsuo Kurosawa ◽  
Takayuki Aoyama ◽  
Yasuo Nara
2010 ◽  
Vol 1252 ◽  
Author(s):  
Gang Niu ◽  
Bertrand Vilquin ◽  
Nicolas Baboux ◽  
Guillaume Saint-Girons ◽  
Carole Plossu ◽  
...  

AbstractThis work reports on the epitaxial growth of crystalline high-k Gd2O3 on Si (111) by Molecular Beam Epitaxy (MBE) for CMOS gate application. Epitaxial Gd2O3 films of different thicknesses have been deposited on Si (111) between 650°C~750°C. Electrical characterizations reveal that the sample grown at the optimal temperature (700°C) presents an equivalent oxide thickness (EOT) of 0.73nm with a leakage current density of 3.6×10-2 A/cm2 at |Vg-VFB|=1V. Different Post deposition Annealing (PDA) treatments have been performed for the samples grown under optimal condition. The Gd2O3 films exhibit good stability and the PDA process can effectively reduce the defect density in the oxide layer, which results in higher performances of the Gd2O3/Si (111) capacitor.


2021 ◽  
Author(s):  
Hong-Cai Zhou ◽  
Yan Yue ◽  
Peiyu Cai ◽  
Xiaoyi Xu ◽  
Hanying Li ◽  
...  

2021 ◽  
Vol 60 (19) ◽  
pp. 10806-10813
Author(s):  
Yan Yue ◽  
Peiyu Cai ◽  
Xiaoyi Xu ◽  
Hanying Li ◽  
Hongzheng Chen ◽  
...  

2021 ◽  
Vol 9 (14) ◽  
pp. 4971-4977
Author(s):  
Mehmet Emin Kilic ◽  
Kwang-Ryeol Lee

Tetrahexagonal AlN: a novel two-dimensional family for photocatalytic water splitting with exceptional mechanical, electronic, and optical properties.


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