Extended Scalability of HfON/SiON Gate Stack Down to 0.57 nm Equivalent Oxide Thickness with High Carrier Mobility by Post-Deposition Annealing
2009 ◽
Vol 48
(4)
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pp. 04C004
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2012 ◽
Vol 51
(2S)
◽
pp. 02BA04
◽
2012 ◽
Vol 51
(2)
◽
pp. 02BA04
◽
2012 ◽
Vol 182
(4)
◽
pp. 437
◽
2021 ◽
Vol 60
(19)
◽
pp. 10806-10813
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