Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel Dual-Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Mohammad Kazem Anvarifard; Seyed Ebrahim Hosseini; Mahdi Gordi Armaki

doi:10.1143/jjap.48.104501

Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel Dual-Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.104501 ◽

2009 ◽

Vol 48 (10) ◽

pp. 104501 ◽

Cited By ~ 2

Author(s):

Mohammad Kazem Anvarifard ◽

Seyed Ebrahim Hosseini ◽

Mahdi Gordi Armaki

Keyword(s):

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted ◽

Dual Gate ◽

Effect Transistor

Download Full-text

Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.04fd19 ◽

2018 ◽

Vol 57 (4S) ◽

pp. 04FD19 ◽

Cited By ~ 1

Author(s):

Keiichi Maekawa ◽

Hideki Makiyama ◽

Yoshiki Yamamoto ◽

Takumi Hasegawa ◽

Shinobu Okanishi ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Comprehensive Analysis ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Fully Depleted ◽

Effect Transistor

Download Full-text

PH3Ion Shower Implantation and Rapid Thermal Anneal with Oxide Capping and Its Application to Source and Drain Formation of a Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.6943 ◽

2004 ◽

Vol 43 (10) ◽

pp. 6943-6947 ◽

Cited By ~ 2

Author(s):

Ki-Soo Kim ◽

Moon-Seok Yang ◽

Joo-Kyung Song ◽

Sang-Hyun Hong ◽

Ohyun Kim

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Rapid Thermal Anneal ◽

Fully Depleted ◽

Effect Transistor

Download Full-text

A Simple, Analytical and Complete Deep-Submicrometer Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering Velocity Overshoot

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1015 ◽

1997 ◽

Vol 36 (Part 1, No. 3A) ◽

pp. 1015-1024 ◽

Cited By ~ 2

Author(s):

Sheng-Lyang Jang ◽

Man-Chun Hu ◽

Shau-Shen Liu ◽

Young-Shying Chen

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Velocity Overshoot ◽

Fully Depleted ◽

Deep Submicrometer ◽

Transistor Model ◽

Effect Transistor

Download Full-text

Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2166 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2166-2169 ◽

Cited By ~ 9

Author(s):

Daisuke Kitamaru ◽

Yasuhito Uetsuji ◽

Norio Sadachika ◽

Mitiko Miura-Mattausch

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Circuit Simulation ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Transistor Model ◽

Effect Transistor

Download Full-text

Extraction of Front and Buried Oxide Interface Trap Densities in Fully Depleted Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor

ECS Solid State Letters ◽

10.1149/2.001305ssl ◽

2013 ◽

Vol 2 (5) ◽

pp. Q32-Q34 ◽

Cited By ~ 4

Author(s):

J.-Y. Cheng ◽

C. W. Yeung ◽

C. Hu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Interface Trap ◽

Oxide Interface ◽

Fully Depleted ◽

Effect Transistor

Download Full-text

Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.6226 ◽

1999 ◽

Vol 38 (Part 1, No. 11) ◽

pp. 6226-6231 ◽

Cited By ~ 69

Author(s):

Wataru Saitoh ◽

Atsushi Itoh ◽

Shigeharu Yamagami ◽

Masahiro Asada

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Metal Gate ◽

Short Channel ◽

Effect Transistor ◽

Insulator Substrate

Download Full-text

Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor

Acta Physica Sinica ◽

10.7498/aps.62.108501 ◽

2013 ◽

Vol 62 (10) ◽

pp. 108501

Author(s):

Xin Yan-Hui ◽

Liu Hong-Xia ◽

Fan Xiao-Jiao ◽

Zhuo Qing-Qing

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Strained Si ◽

Fully Depleted ◽

Effect Transistor

Download Full-text

A Novel Step-Doping Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor for Reliable Deep Sub-micron Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.114503 ◽

2009 ◽

Vol 48 (11) ◽

pp. 114503 ◽

Cited By ~ 2

Author(s):

Hossein Elahipanah ◽

Ali A. Orouji

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Effect Transistor

Download Full-text

A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor

Chinese Physics Letters ◽

10.1088/0256-307x/25/8/084 ◽

2008 ◽

Vol 25 (8) ◽

pp. 3048-3051 ◽

Cited By ~ 2

Author(s):

Yang Yuan ◽

Gao Yong ◽

Gong Peng-Liang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Effect Transistor

Download Full-text

Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

Download Full-text