Hot-Carrier Immunity of Polycrystalline Silicon Thin Film Transistors Using Silicon Oxynitride Gate Dielectric Formed with Plasma-Enhanced Chemical Vapor Deposition

2009 ◽  
Vol 48 (11) ◽  
pp. 116507
Author(s):  
Masafumi Kunii
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Silicon Thin Film ◽  
Hot Carrier

Hot-wire CVD a-Si:H TFT on Plastic Substrates

2006 ◽  
Vol 910 ◽  
Author(s):  
Farhad Taghibakhsh ◽  
K.S. Karim
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Plastic Substrate ◽  
Hot Wire ◽  
Low Leakage

AbstractFabrication of hot-wire chemical vapor deposition (HWCVD) of amorphous silicon (a-Si) thin film transistors (TFT) on thin polyamide sheets is reported. A single graphite filament at 1500 °C was used for HWCVD and device quality amorphous silicon films were deposited with no thermal damage to plastic substrate. Top-gate staggered thin film transistors (TFTs) were fabricated at 150°C using hot-wire deposited a-Si channel, Plasma enhanced chemical vapor deposition (PECVD) silicon nitride gate dielectric, and microcrystalline n+ drain/source contacts. Low leakage current of 5×10-13 A, high switching current ratio of 1.3×107, and small sub threshold swing of 0.3 V/dec was obtained for TFTs with aspect ratio of 1300μm/100μm. The field effect mobility was extracted to be 0.34 cm2/V.s.

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