Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65nm advanced complementary metal oxide semiconductor technology

2013 ◽  
Vol 533 ◽  
pp. 24-28 ◽  
Author(s):  
Therese Diokh ◽  
Elise Le-Roux ◽  
Simon Jeannot ◽  
Carlo Cagli ◽  
Vincent Jousseaume ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Random Access ◽  
Complementary Metal Oxide Semiconductor ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Technology ◽  
Access Memory

Characteristics of Dual Polymetal (W/WNx/Poly-Si) Gate Complementary Metal Oxide Semiconductor for 0.1 µm Dynamic Random Access Memory Technology

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 1969-1973 ◽  
Author(s):  
Yong–Hae Kim ◽  
Sung–Keun Chang ◽  
Seon–Soon Kim ◽  
Jun–Gi Choi ◽  
Sang–Hee Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Random Access ◽  
Complementary Metal Oxide Semiconductor ◽  
Random Access Memory ◽  
Metal Oxide Semiconductor ◽  
Dynamic Random Access Memory ◽  
Oxide Semiconductor ◽  
Access Memory
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