Thin-Film Transistor Type Flash Memory with Biomineralized Co Nanodots on Silicon-on-Insulator

2010 ◽  
Vol 49 (4) ◽  
pp. 04DJ05 ◽  
Author(s):  
Kosuke Ohara ◽  
Ichiro Yamashita ◽  
Yukiharu Uraoka
Keyword(s):  
Thin Film ◽  
Flash Memory ◽  
Thin Film Transistor ◽  
Silicon On Insulator

A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

2006 ◽  
Author(s):  
Erh-Kun Lai ◽  
Hang-Ting Lue ◽  
Yi-Hsuan Hsiao ◽  
Jung-Yu Hsieh ◽  
Chi-Pin Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Flash Memory ◽  
Thin Film Transistor

The Optimization of 0.5μm SONOS Flash Memory with Polycrystalline Silicon Thin Film Transistor

2012 ◽  
Vol 49 (10) ◽  
pp. 111-121
Author(s):  
Sang Wan Kim ◽  
Chang-Su Seo ◽  
Yu-Kyung Park ◽  
Sang-Yeop Jee ◽  
Yun-Bin Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Flash Memory ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film

Towards printable organic thin film transistor based flash memory devices

2011 ◽  
Vol 21 (14) ◽  
pp. 5203 ◽  
Author(s):  
Wei Lin Leong ◽  
Nripan Mathews ◽  
Bertha Tan ◽  
Subramanian Vaidyanathan ◽  
Florian Dötz ◽  
...  
Keyword(s):  
Thin Film ◽  
Flash Memory ◽  
Thin Film Transistor ◽  
Memory Devices ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

scholarly journals Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel

Electronics ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 53
Author(s):  
Hoonhee Han ◽  
Seokmin Jang ◽  
Duho Kim ◽  
Taeheun Kim ◽  
Hyeoncheol Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Indium Tin Oxide ◽  
Flash Memory ◽  
Metal Layer ◽  
Thin Film Transistor ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium ◽  
Memory Characteristics

The memory characteristics of a flash memory device using c-axis aligned crystal indium gallium zinc oxide (CAAC-IGZO) thin film as a channel material were demonstrated. The CAAC-IGZO thin films can replace the current poly-silicon channel, which has reduced mobility because of grain-induced degradation. The CAAC-IGZO thin films were achieved using a tantalum catalyst layer with annealing. A thin film transistor (TFT) with SiO2/Si3N4/Al2O3 and CAAC-IGZO thin films, where Al2O3 was used for the tunneling layer, was evaluated for a flash memory application and compared with a device using an amorphous IGZO (a-IGZO) channel. A source and drain using indium-tin oxide and aluminum were also evaluated for TFT flash memory devices with crystallized and amorphous channel materials. Compared with the a-IGZO device, higher on-current (Ion), improved field effect carrier mobility (μFE), a lower body trap (Nss), a wider memory window (ΔVth), and better retention and endurance characteristics were attained using the CAAC-IGZO device.

Low-temperature Polycrystalline Silicon Thin Film Transistor Flash Memory with Ferritin

2007 ◽  
Vol 46 (No. 34) ◽  
pp. L804-L806 ◽  
Author(s):  
Kazunori Ichikawa ◽  
Yukiharu Uraoka ◽  
Prakaipetch Punchaipetch ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Flash Memory ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film
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