In situFormation of HfN/HfSiON Gate Stacks with 0.5 nm Equivalent Oxide Thickness Utilizing Electron Cyclotron Resonance Plasma Sputtering on Three-Dimensional Si Structures

2011 ◽  
Vol 50 (4) ◽  
pp. 04DA09 ◽  
Author(s):  
Takahiro Sano ◽  
Shun-ichiro Ohmi
Sign in / Sign up

Export Citation Format

Share Document