In situFormation of HfN/HfSiON Gate Stacks with 0.5 nm Equivalent Oxide Thickness Utilizing Electron Cyclotron Resonance Plasma Sputtering on Three-Dimensional Si Structures
2011 ◽
Vol 50
(4S)
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pp. 04DA09
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2011 ◽
Vol 50
(4)
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pp. 04DA09
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1995 ◽
Vol 05
(C5)
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pp. C5-671-C5-677
2012 ◽
Vol 51
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pp. 125602
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1997 ◽
Vol 105
(1224)
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pp. 687-689
1997 ◽
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(1)
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pp. 60
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2004 ◽
Vol 22
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pp. 1793-1798
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1991 ◽
Vol 30
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pp. 3796-3801
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2010 ◽
Vol 204
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pp. 1836-1841
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2014 ◽
Vol 75
(1)
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pp. 94-99
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