Copper film formation using electron cyclotron resonance plasma sputtering and reflow method

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589256 ◽

1997 ◽

Vol 15 (1) ◽

pp. 60 ◽

Author(s):

S. Shibuki

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Film Formation ◽

Copper Film ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Resonance Plasma

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Preparation of Bismuth Titanate Films by Electron Cyclotron Resonance Plasma Sputtering-Chemical Vapor Deposition

Journal de Physique IV (Proceedings) ◽

10.1051/jphyscol:1995580 ◽

1995 ◽

Vol 05 (C5) ◽

pp. C5-671-C5-677

Author(s):

H. Masumoto ◽

T. Hirai

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Bismuth Titanate ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Resonance Plasma

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The Structure and Bonding State for Fullerene-Like Carbon Nitride Films with High Hardness Formed by Electron Cyclotron Resonance Plasma Sputtering

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.125602 ◽

2012 ◽

Vol 51 ◽

pp. 125602 ◽

Author(s):

Tomoyuki Kamata ◽

Osamu Niwa ◽

Shigeru Umemura ◽

Shigeru Hirono

Keyword(s):

Cyclotron Resonance ◽

Carbon Nitride ◽

Electron Cyclotron Resonance ◽

High Hardness ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Bonding State ◽

Plasma Sputtering ◽

Structure And Bonding ◽

Resonance Plasma

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Optical Properties of c-Axis Oriented Ba2NaNb5O15 Thin Films Formed by Electron Cyclotron Resonance Plasma Sputtering

Journal of the Ceramic Society of Japan ◽

10.2109/jcersj.105.687 ◽

1997 ◽

Vol 105 (1224) ◽

pp. 687-689

Author(s):

Akira WATAZU ◽

Hiroshi MASUMOTO ◽

Yoichiro MASUDA ◽

Toshio HIRAI

Keyword(s):

Optical Properties ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Resonance Plasma

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Composition and crystal structure of carbon nitride films prepared by the electron cyclotron resonance plasma sputtering method

Applied Physics Letters ◽

10.1063/1.122235 ◽

1998 ◽

Vol 73 (12) ◽

pp. 1652-1654 ◽

Author(s):

Youji Tani ◽

Yoshifumi Aoi ◽

Eiji Kamijo

Keyword(s):

Crystal Structure ◽

Cyclotron Resonance ◽

Carbon Nitride ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Resonance Plasma

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In situFormation of HfN/HfSiON Gate Stacks with 0.5 nm Equivalent Oxide Thickness Utilizing Electron Cyclotron Resonance Plasma Sputtering on Three-Dimensional Si Structures

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04da09 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DA09 ◽

Author(s):

Takahiro Sano ◽

Shun-ichiro Ohmi

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Three Dimensional ◽

Oxide Thickness ◽

Electron Cyclotron ◽

Equivalent Oxide Thickness ◽

Gate Stacks ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Resonance Plasma

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Electron cyclotron resonance plasma sputtering growth of textured films ofc-axis-oriented LiNbO3 on Si(100) and Si(111) surfaces

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1764817 ◽

2004 ◽

Vol 22 (4) ◽

pp. 1793-1798 ◽

Author(s):

H. Akazawa ◽

M. Shimada

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Resonance Plasma

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On the silicon nitride film formation from N/sub 2/-SiH/sub 4/ electron cyclotron resonance plasma

IEEE Conference Record - Abstracts. 1992 IEEE International Conference on Plasma ◽

10.1109/plasma.1992.697984 ◽

2005 ◽

Author(s):

Sun-Kyu Song ◽

Hong-young Chang

Keyword(s):

Silicon Nitride ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Film Formation ◽

Electron Cyclotron ◽

Nitride Film ◽

Silicon Nitride Film ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Bi12SiO20Thin Films Grown by Electron Cyclotron Resonance Plasma Sputtering with a Bi and Si Multitarget System

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.3796 ◽

1991 ◽

Vol 30 (Part 1, No. 12B) ◽

pp. 3796-3801 ◽

Author(s):

Koji Nomura ◽

Hisahito Ogawa

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Resonance Plasma

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Highly adhesive Pt-electrode films directly deposited on SiO2 by electron-cyclotron-resonance plasma sputtering

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2009.11.025 ◽

2010 ◽

Vol 204 (11) ◽

pp. 1836-1841 ◽

Author(s):

Housei Akazawa

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Pt Electrode ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Resonance Plasma

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In situFormation of HfN/HfSiON Gate Stacks with 0.5 nm Equivalent Oxide Thickness Utilizing Electron Cyclotron Resonance Plasma Sputtering on Three-Dimensional Si Structures

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04da09 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DA09 ◽

Author(s):

Takahiro Sano ◽

Shun-ichiro Ohmi

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Three Dimensional ◽

Oxide Thickness ◽

Electron Cyclotron ◽

Equivalent Oxide Thickness ◽

Gate Stacks ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Resonance Plasma

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