Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

2012 ◽  
Vol 51 ◽  
pp. 04DA05
Author(s):  
Tetsuro Hayashida ◽  
Kazuhiko Endo ◽  
Yongxun Liu ◽  
Shin-ichi O'uchi ◽  
Takashi Matsukawa ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Titanium Nitride ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Experimental Comparisons

scholarly journals Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
J. H. Yum ◽  
J. Oh ◽  
Todd. W. Hudnall ◽  
C. W. Bielawski ◽  
G. Bersuker ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Performance ◽  
Field Effect Transistors ◽  
Beryllium Oxide ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Effective Electron

In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.

High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique

2010 ◽  
Vol 3 (4) ◽  
pp. 041302 ◽  
Author(s):  
Sanjeewa Dissanayake ◽  
Kentaro Tomiyama ◽  
Satoshi Sugahara ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

scholarly journals A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core–Insulator

Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 223 ◽  
Author(s):  
Yannan Zhang ◽  
Ke Han ◽  
and Jiawei Li
Keyword(s):  
Metal Oxide ◽  
Low Power ◽  
Energy Efficient ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Future Generation ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Ultra Low Power

Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which greatly enable electronic devices such as smart phones to be energy-efficient and portable. In the pursuit of smaller and faster devices, researchers and scientists have worked out a number of ways to further lower the leaking current of MOSFETs (Metal oxide semiconductor field effect transistor). Nanowire structure is now regarded as a promising candidate of future generation of logical devices due to its ultra-low off-state leaking current compares to FinFET. However, the potential of nanowire in terms of off-state current has not been fully discovered. In this article, a novel Core–Insulator Gate-All-Around (CIGAA) nanowire has been proposed, investigated, and simulated comprehensively and systematically based on 3D numerical simulation. Comparisons are carried out between GAA and CIGAA. The new CIGAA structure exhibits low off-state current compares to that of GAA, making it a suitable candidate of future low-power and energy-efficient devices.

Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric

2008 ◽  
Vol 92 (23) ◽  
pp. 233508 ◽  
Author(s):  
Han Zhao ◽  
Davood Shahrjerdi ◽  
Feng Zhu ◽  
Manhong Zhang ◽  
Hyoung-Sub Kim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Al2o3 Gate Dielectric
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