Super-Low-$k$ SiOCH Film with Sufficient Film Modulus and High Thermal Stability Formed by Using Admixture Precursor in Neutral-Beam-Enhanced Chemical Vapor Deposition

2012 ◽  
Vol 51 ◽  
pp. 05EC01 ◽  
Author(s):  
Akira Wada ◽  
Toru Sasaki ◽  
Shigeo Yasuhara ◽  
Seiji Samukawa
2000 ◽  
Vol 15 (1) ◽  
pp. 228-230 ◽  
Author(s):  
Jongryang Joo ◽  
Yong Chun Quan ◽  
Donggeun Jung

Effects of plasma power on the properties of polymerlike organic thin films deposited by plasma-enhanced chemical vapor deposition using the toluene precursor were studied. As the plasma power was increased from 5 to 60 W, the relative dielectric constant increased from 2.53 to 2.85. The film deposited at higher plasma power showed higher thermal stability. The film deposited at 60 W was stable up to 400 °C. All the films were insulating under applied field ≤1 MV/cm.


2019 ◽  
Vol 48 (20) ◽  
pp. 6709-6713 ◽  
Author(s):  
Liuchuan Tong ◽  
Luke M. Davis ◽  
Xian Gong ◽  
Jun Feng ◽  
Eugene S. Beh ◽  
...  

Coinage metal bicyclic amidinates for chemical vapor deposition.


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