Characterization of Interface State Density of SiO2/SiC (000-1) Based on Oxygen Concentration at the Interface during Thermal Oxidation

A nitride layer was formed on a SiC surface by plasma nitridation using pure nitrogen as the reaction gas at the temperature from 800°C to 1400°C. The surface was characterized by XPS. The XPS measurement showed that an oxinitride layer was formed on the SiC surface by the plasma nitridation. The high process temperature seemed to be effective to activate the niridation reaction. A SiO2film was deposited on the nitridation layer to form SiO2/nitride/SiC structure. The interface state density of the SiO2/nitride/SiC structure was lower than that of the SiO2/SiC structure. This suggested that the nitridation was effective to improve the interface property.

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Characterization of Wet Chemical Atomic Layer Etching of InGaAs

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.314.95 ◽

2021 ◽

Vol 314 ◽

pp. 95-98

Author(s):

Tomoki Hirano ◽

Kenya Nishio ◽

Takashi Fukatani ◽

Suguru Saito ◽

Yoshiya Hagimoto ◽

...

Keyword(s):

Surface Condition ◽

Atomic Layer ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Etching Process ◽

Wet Chemical ◽

Oxide Removal ◽

Atomic Layer Etching

In this work, we characterized the wet chemical atomic layer etching of an InGaAs surface by using various surface analysis methods. For this etching process, H2O2 was used to create a self-limiting oxide layer. Oxide removal was studied for both HCl and NH4OH solutions. Less In oxide tended to remain after the HCl treatment than after the NH4OH treatment, so the combination of H2O2 and HCl is suitable for wet chemical atomic layer etching. In addition, we found that repetition of this etching process does not impact on the oxide amount, surface roughness, and interface state density. Thus, nanoscale etching of InGaAs with no impact on the surface condition is possible with this method.

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Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.663 ◽

2016 ◽

Vol 858 ◽

pp. 663-666

Author(s):

Marilena Vivona ◽

Patrick Fiorenza ◽

Tomasz Sledziewski ◽

Alexandra Gkanatsiou ◽

Michael Krieger ◽

...

Keyword(s):

Electrical Properties ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Device Fabrication ◽

Oxide Semiconductor ◽

Mos Capacitors ◽

Oxide Breakdown

In this work, the electrical properties of SiO2/SiC interfaces onto a 2°-off axis 4H-SiC layer were studied and validated through the processing and characterization of metal-oxide-semiconductor (MOS) capacitors. The electrical analyses on the MOS capacitors gave an interface state density in the low 1×1012 eV-1cm-2 range, which results comparable to the standard 4°-off-axis 4H-SiC, currently used for device fabrication. From Fowler-Nordheim analysis and breakdown measurements, a barrier height of 2.9 eV and an oxide breakdown of 10.3 MV/cm were determined. The results demonstrate the maturity of the 2°-off axis material and pave the way for the fabrication of 4H-SiC MOSFET devices on this misorientation angle.

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Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.276.87 ◽

2011 ◽

Vol 276 ◽

pp. 87-93

Author(s):

Y.Y. Gomeniuk ◽

Y.V. Gomeniuk ◽

A. Nazarov ◽

P.K. Hurley ◽

Karim Cherkaoui ◽

...

Keyword(s):

Electrical Characterization ◽

Gate Oxide ◽

Interface State ◽

Channel Length ◽

State Density ◽

Interface State Density ◽

Mos Capacitors ◽

Channel Mobility ◽

Threshold Voltages

The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-κ LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO3/Si interface is presented and typical maxima of 1.2×1011 eV–1cm–2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 µm and 50 µm, respectively) are presented. The front channel mobility appeared to be 126 cm2V–1s–1 and 70 cm2V–1s–1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.

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Control of 4H-SiC (0001) Thermal Oxidation Process for Reduction of Interface State Density

ECS Transactions ◽

10.1149/06408.0023ecst ◽

2014 ◽

Vol 64 (8) ◽

pp. 23-28 ◽

Cited By ~ 5

Author(s):

K. Kita ◽

R. H. Kikuchi ◽

H. Hirai ◽

Y. Fujino

Keyword(s):

Thermal Oxidation ◽

Oxidation Process ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Thermal Oxidation Process

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Correlation between midgap interface state density and thickness‐averaged oxide stress and strain at Si/SiO2interfaces formed by thermal oxidation of Si

Applied Physics Letters ◽

10.1063/1.103228 ◽

1990 ◽

Vol 56 (20) ◽

pp. 1983-1985 ◽

Cited By ~ 66

Author(s):

C. H. Bjorkman ◽

J. T. Fitch ◽

G. Lucovsky

Keyword(s):

Thermal Oxidation ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Stress And Strain ◽

Oxide Stress

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High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.789 ◽

2009 ◽

Vol 615-617 ◽

pp. 789-792

Author(s):

Masato Noborio ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Thermal Oxidation ◽

Interface State ◽

Original Method ◽

State Density ◽

Interface State Density ◽

Gate Oxides ◽

Channel Mobility ◽

Mos Devices

P-channel MOSFETs have been fabricated on 4H-SiC (0001) face as well as on 4H-SiC (03-38) and (11-20) faces. The gate oxides were formed by thermal oxidation in dry N2O ambient, which is widely accepted to improve the performance of n-channel SiC MOSFETs. The p-channel SiC MOSFETs with N2O-grown oxides on 4H-SiC (0001), (03-38), and (11-20) faces show a channel mobility of 7 cm2/Vs, 11 cm2/Vs, and 17 cm2/Vs, respectively. From the quasi-static C-V curves measured by using gate-controlled diodes, the interface state density was calculated by an original method. The interface state density was the lowest at the SiO2/4H-SiC (03-38) interface (about 1x1012 cm-2eV-1 at EV + 0.2 eV). The authors have applied deposited oxides to the 4H-SiC p-channel MOSFETs. The (0001), (03-38), and (11-20) MOSFETs with deposited oxides exhibit a channel mobility of 10 cm2/Vs, 13 cm2/Vs, and 17 cm2/Vs, respectively. The deposited oxides are one of effective approaches to improve both n-channel and p-channel 4H-SiC MOS devices.

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