Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

2004 ◽  
Vol 151 (6) ◽  
pp. F146 ◽  
Author(s):  
Shou-Yi Chang ◽  
Tzu-Jen Chou ◽  
Yung-Cheng Lu ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
...  
2004 ◽  
Vol 466 (1-2) ◽  
pp. 54-61 ◽  
Author(s):  
Shou-Yi Chang ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
Mong-Song Liang

1996 ◽  
Vol 443 ◽  
Author(s):  
Raymond N. Vrtis ◽  
Kelly A. Heap ◽  
William F. Burgoyne ◽  
Lloyd M. Robeson

AbstractPoly(arylene ethers)s are low dielectric constant organic spin on materials. PAE-2, which is a non-fluorinated poly(arylene ether), exhibits a dielectric constant below 3.0, thermal stability greater than 425 °C as well as excellent adhesion to Si, SiO2, and Al. These are the major atributes which makes it a very attractive candidate for integration as an interlevel or inter-metal dielectric material (ILD). Material properties including dielectric constant, thermal stability, moisture absorption, and mechanical analysis will be discussed.


2005 ◽  
Vol 87 (26) ◽  
pp. 262909 ◽  
Author(s):  
L. Esposito ◽  
G. Ottaviani ◽  
E. Carollo ◽  
M. Bacchetta

1998 ◽  
Vol 511 ◽  
Author(s):  
Licheng M. Han ◽  
Richard B. Timmons ◽  
Wei W. Lee

ABSTRACTThe utility of a variable duty cycle, pulsed plasma polymerization technique to produce low dielectric constant materials (k < 2.3) is described. The molecular compositions (and thus the dielectric constants) of the plasma polymers are controllable via changes in the plasma duty cycles employed during synthesis, all other reaction variables being held constant. In the present study, this compositional controllability under pulsed conditions is illustrated with two fluoroaromatic monomers. The dielectric constants of the films decrease as the plasma duty cycles employed during polymerization are decreased. Although the as deposited films exhibit relatively poor thermal stability, it was discovered that post-plasma annealing of the films, particularly at 400 °C under N2, provides dramatic improvements in the thermal stability of these materials. Most importantly, this enhanced thermal stability is achieved with relatively minor changes in the dielectric properties of these materials. In fact, synthesis of high thermal stability films having k < 2.0 is demonstrated in this work using the perfluoroaromatic monomer perfluoroallyl benzene.


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