Poly(Arylene Ethers) as Low Dielectric Constant Materials for ULSI Interconnect Applications

AbstractPoly(arylene ethers)s are low dielectric constant organic spin on materials. PAE-2, which is a non-fluorinated poly(arylene ether), exhibits a dielectric constant below 3.0, thermal stability greater than 425 °C as well as excellent adhesion to Si, SiO2, and Al. These are the major atributes which makes it a very attractive candidate for integration as an interlevel or inter-metal dielectric material (ILD). Material properties including dielectric constant, thermal stability, moisture absorption, and mechanical analysis will be discussed.

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Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

Journal of The Electrochemical Society ◽

10.1149/1.1731520 ◽

2004 ◽

Vol 151 (6) ◽

pp. F146 ◽

Cited By ~ 14

Author(s):

Shou-Yi Chang ◽

Tzu-Jen Chou ◽

Yung-Cheng Lu ◽

Syun-Ming Jang ◽

Su-Jien Lin ◽

...

Keyword(s):

Thermal Stability ◽

Dielectric Constant ◽

Low Dielectric Constant ◽

Process Window ◽

Curing Process ◽

Low Dielectric ◽

Low Dielectric Constant Materials ◽

Thermal Stability Of

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Ultra-low dielectric constant materials with hydrophobic property derived from polyhedral oligomeric silsequioxane (POSS) and perfluoro-aromatics

RSC Advances ◽

10.1039/c6ra17499j ◽

2016 ◽

Vol 6 (90) ◽

pp. 87433-87439 ◽

Cited By ~ 23

Author(s):

Jinmeng Hao ◽

Yanfeng Wei ◽

Jianxin Mu

Keyword(s):

Dielectric Constant ◽

Dielectric Constants ◽

Low Dielectric Constant ◽

Hydrophobic Property ◽

Hydrophobic Properties ◽

Low Dielectric ◽

Arylene Ether ◽

Low Dielectric Constant Materials ◽

Soluble Poly

Soluble poly(arylene ether)s with perfluoro-aromatics and POSS in the main chains exhibited ultra low dielectric constants and hydrophobic properties.

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Pulsed Plasma Synthesis of Low Dielectric Constant Materials

MRS Proceedings ◽

10.1557/proc-511-93 ◽

1998 ◽

Vol 511 ◽

Cited By ~ 5

Author(s):

Licheng M. Han ◽

Richard B. Timmons ◽

Wei W. Lee

Keyword(s):

Thermal Stability ◽

Dielectric Constant ◽

Dielectric Constants ◽

Low Dielectric Constant ◽

Plasma Synthesis ◽

Pulsed Plasma ◽

Plasma Polymers ◽

Low Dielectric ◽

Duty Cycles ◽

Low Dielectric Constant Materials

ABSTRACTThe utility of a variable duty cycle, pulsed plasma polymerization technique to produce low dielectric constant materials (k < 2.3) is described. The molecular compositions (and thus the dielectric constants) of the plasma polymers are controllable via changes in the plasma duty cycles employed during synthesis, all other reaction variables being held constant. In the present study, this compositional controllability under pulsed conditions is illustrated with two fluoroaromatic monomers. The dielectric constants of the films decrease as the plasma duty cycles employed during polymerization are decreased. Although the as deposited films exhibit relatively poor thermal stability, it was discovered that post-plasma annealing of the films, particularly at 400 °C under N2, provides dramatic improvements in the thermal stability of these materials. Most importantly, this enhanced thermal stability is achieved with relatively minor changes in the dielectric properties of these materials. In fact, synthesis of high thermal stability films having k < 2.0 is demonstrated in this work using the perfluoroaromatic monomer perfluoroallyl benzene.

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Properties and thermal stability of porous organic low-dielectric-constant materials

Thin Solid Films ◽

10.1016/j.tsf.2004.01.112 ◽

2004 ◽

Vol 466 (1-2) ◽

pp. 54-61 ◽

Cited By ~ 12

Author(s):

Shou-Yi Chang ◽

Syun-Ming Jang ◽

Su-Jien Lin ◽

Mong-Song Liang

Keyword(s):

Thermal Stability ◽

Dielectric Constant ◽

Low Dielectric Constant ◽

Low Dielectric ◽

Low Dielectric Constant Materials ◽

Thermal Stability Of

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Material Properties of a SiOC Low Dielectric Constant Film with Extendibility to k < 2.7

MRS Proceedings ◽

10.1557/proc-612-d5.3.1 ◽

2000 ◽

Vol 612 ◽

Cited By ~ 4

Author(s):

Eugene S. Lopata ◽

Lydia Young ◽

John T. Felts

Keyword(s):

Thermal Stability ◽

Dielectric Constant ◽

Material Properties ◽

Low Dielectric Constant ◽

Adhesion Properties ◽

Interlayer Dielectric ◽

Good Thermal Stability ◽

Low Dielectric ◽

Excellent Adhesion ◽

Low K

AbstractA plasma deposited SiOC very low k (VLK) interlayer dielectric (ILD) film has been developed which can be tuned to 2.5 = k = 3.0, demonstrates very good thermal stability, excellent adhesion properties, acceptable hardness, and an indication that it may be extendible to k < 2.5. This paper will disclose properties of this SiOC film which are important to a VLK ILD application.

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Evaluation of PTFE Nanoemulsion as a Low Dielectric Constant Material ILD

MRS Proceedings ◽

10.1557/proc-443-85 ◽

1996 ◽

Vol 443 ◽

Cited By ~ 5

Author(s):

S. C. Sun ◽

Y. C. Chiang ◽

C. T. Rosenmayer ◽

J. Teguh ◽

H. Wu

Keyword(s):

Dielectric Constant ◽

Integrated Circuit ◽

Moisture Absorption ◽

Dielectric Material ◽

Dielectric Strength ◽

Index Of Refraction ◽

Low Dielectric Constant ◽

Nanoparticle Dispersion ◽

Positive Photoresist ◽

Low Dielectric

AbstractPolytetrafluoroethylene (PTFE) has been studied as a low dielectric constant material for ULSI. A novel nanoparticle dispersion of PTFE was developed that permits the spin-coat deposition of PTFE with a thickness range of 0.2 to 1.5 μm. These PTFE nanoemulsions are aqueous emulsions containing sub-50 nm size PTFE particles and surfactant that are thermodynamically stable, optically clear, and have low viscosity and surface tension. The films cast from this nanoemulsion are uniform in thickness with a standard deviation of < 2%. From FTIR spectra, significant amounts of C-F bonds (1153 cm−1 and 1211 cm−1) are detected in the films. The index of refraction from ellipsometry measurement is about 1.35 and the dielectric constant measured from high frequency C-V curves is about 1.85. The dielectric strength is about 170 V/ μm. TGA data indicates a weight loss rate of less than 0.25%/hr. at 425 °C. The moisture absorption is less than 0.01%. After sintering, the films are extremely resistant to chemical attack by sulfuric acid, buffered HF, and positive photoresist developer. The etch rate in an oxygen plasma at 30 W is around 200 nm/min. Stud pull tests indicate good adhesion to SiO2, Al, and Cu. Results of thermal, dielectric, chemical, and adhesion tests indicate that these PTFE films have potential for use as an integrated circuit dielectric material.

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