Pulsed Plasma Synthesis of Low Dielectric Constant Materials

1998 ◽  
Vol 511 ◽  
Author(s):  
Licheng M. Han ◽  
Richard B. Timmons ◽  
Wei W. Lee

ABSTRACTThe utility of a variable duty cycle, pulsed plasma polymerization technique to produce low dielectric constant materials (k < 2.3) is described. The molecular compositions (and thus the dielectric constants) of the plasma polymers are controllable via changes in the plasma duty cycles employed during synthesis, all other reaction variables being held constant. In the present study, this compositional controllability under pulsed conditions is illustrated with two fluoroaromatic monomers. The dielectric constants of the films decrease as the plasma duty cycles employed during polymerization are decreased. Although the as deposited films exhibit relatively poor thermal stability, it was discovered that post-plasma annealing of the films, particularly at 400 °C under N2, provides dramatic improvements in the thermal stability of these materials. Most importantly, this enhanced thermal stability is achieved with relatively minor changes in the dielectric properties of these materials. In fact, synthesis of high thermal stability films having k < 2.0 is demonstrated in this work using the perfluoroaromatic monomer perfluoroallyl benzene.

2004 ◽  
Vol 151 (6) ◽  
pp. F146 ◽  
Author(s):  
Shou-Yi Chang ◽  
Tzu-Jen Chou ◽  
Yung-Cheng Lu ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
...  

1996 ◽  
Vol 443 ◽  
Author(s):  
Raymond N. Vrtis ◽  
Kelly A. Heap ◽  
William F. Burgoyne ◽  
Lloyd M. Robeson

AbstractPoly(arylene ethers)s are low dielectric constant organic spin on materials. PAE-2, which is a non-fluorinated poly(arylene ether), exhibits a dielectric constant below 3.0, thermal stability greater than 425 °C as well as excellent adhesion to Si, SiO2, and Al. These are the major atributes which makes it a very attractive candidate for integration as an interlevel or inter-metal dielectric material (ILD). Material properties including dielectric constant, thermal stability, moisture absorption, and mechanical analysis will be discussed.


RSC Advances ◽  
2016 ◽  
Vol 6 (90) ◽  
pp. 87433-87439 ◽  
Author(s):  
Jinmeng Hao ◽  
Yanfeng Wei ◽  
Jianxin Mu

Soluble poly(arylene ether)s with perfluoro-aromatics and POSS in the main chains exhibited ultra low dielectric constants and hydrophobic properties.


2004 ◽  
Vol 466 (1-2) ◽  
pp. 54-61 ◽  
Author(s):  
Shou-Yi Chang ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
Mong-Song Liang

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 33-38 ◽  
Author(s):  
Nigel P. Hacker

Low-dielectric-constant materials (k < 3.0) have the advantage of facilitating manufacture of higher performance integrated-circuit (IC) devices with minimal increases in chip size. The reduced capacitance given by these materials permits shrinkage of spacing between metal lines to below 0.25 μm and the ability to decrease the number of levels of metal in a device. The technologies being considered for low-k applications are chemical vapor deposition (CVD) or spin-on of polymeric materials. For both types of processes, there are methods and materials capable of giving k < 3.0 dielectric stacks. This article will focus on the spin-on approach and discuss the properties of both organic and inorganic spin-on polymers.While CVD SiO2 has been the mainstay of the industry, spin-on materials are appropriate for many dielectric applications. Polyimides have applications as electrical insulators, and traditional spin-on silicates or siloxanes (k > 3.0) have served as planarizing dielectrics during the last 15 years. The newer spin-on polymers have greatly enhanced mechanical, thermal, and chemical properties, exhibiting lower dielectric constants than the traditional materials.


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