Effect of Deposition Temperature and Sputtering Ambient on In Situ Cobalt Silicide Formation

ABSTRACTThe chemical-vapor deposition conditions for the growth of pure boron (PureB) layers on silicon at temperatures as low as 400°C were investigated with the purpose of optimizing photodiodes fabricated with PureB anodes for minimal B-layer thickness, low dark current and chemical robustness. The B-deposition is performed in a commercially-available Si epitaxial reactor from a diborane precursor. In-situ methods commonly used to improve the cleanliness of the Si surface before deposition are tested for a deposition temperature of 450°C and PureB layer thickness of 3 nm. Specifically, high-temperature baking in hydrogen, and exposure to HCl are tested. Both material analysis and electrical diode characterization indicate that these extra cleaning steps degrade the properties of the PureB layer and the fabricated diodes.

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Nucleation and Growth of Supported Metal Clusters at Defect Sites on Mgo and NaCl (001) Surfaces: The Cases of Pd and Ag

MRS Proceedings ◽

10.1557/proc-570-51 ◽

1999 ◽

Vol 570 ◽

Cited By ~ 5

Author(s):

J. A. Venables ◽

G. Haas ◽

H. Brune ◽

J.H. Harding

Keyword(s):

Deposition Temperature ◽

Metal Clusters ◽

Variable Temperature ◽

Nucleation And Growth ◽

Force Microscopy ◽

Atomic Force ◽

Defect Sites ◽

Wide Range ◽

Adsorption Surface

ABSTRACTNucleation and growth of metal clusters at defect sites is discussed in terms of rate equation models, which are applied to the cases of Pd and Ag on MgO(001) and NaCl(001) surfaces. Pd/MgO has been studied experimentally by variable temperature atomic force microscopy (AFM). The island density of Pd on Ar-cleaved surfaces was determined in-situ by AFM for a wide range of deposition temperature and flux, and stays constant over a remarkably wide range of parameters; for a particular flux, this plateau extends from 200 K ≤ T ≤ 600 K, but at higher temperatures the density decreases. The range of energies for defect trapping, adsorption, surface diffusion and pair binding are deduced, and compared with earlier data for Ag on NaCl, and with recent calculations for these metals on both NaCl and MgO

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Kinetics of Pt Silicide Formation Studied by Spectral Ellipsometry

MRS Proceedings ◽

10.1557/proc-470-259 ◽

1997 ◽

Vol 470 ◽

Cited By ~ 2

Author(s):

R. Schwarz ◽

A. Dittrich ◽

S. M. Zhou ◽

M. Hundhausen ◽

L. Ley ◽

...

Keyword(s):

Activation Energy ◽

Crystalline Silicon ◽

Silicon Substrates ◽

Silicide Formation ◽

Spectral Ellipsometry ◽

Step Process ◽

Depth Profiles ◽

Ellipsometric Angle ◽

Kinetics Of

ABSTRACTSuicide formation during thermal annealing of thin Pt layers deposited by evaporation onto crystalline silicon substrates was studied by in-situ spectral ellipsometry. As was shown in an earlier study, Pt suicide is formed in a two-step process with intermediate stages of Pt2Si and PtSi at temperatures of about 190 and 240 °C, respectively. We observed a shift of about 15 °C of the di- and monosilicide formation, when the anneal rate was lowered from 3 to 1 K/min. The analysis of the reaction kinetics using the normalized ellipsometric angle δ yields a good fit to the data for different anneal rates with an activation energy of (1.6 ± 0.2) eV. The underlying model of suicide formation through a multilayer system was checked with depth profiles and compositional information obtained from Rutherford Backscattering.

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Cobalt silicide formation by ion mixing

Thin Solid Films ◽

10.1016/0040-6090(84)90259-1 ◽

1984 ◽

Vol 119 (4) ◽

pp. 357-364 ◽

Cited By ~ 51

Author(s):

A.H. Hamdi ◽

M.-A. Nicolet

Keyword(s):

Cobalt Silicide ◽

Silicide Formation

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Diffusion in Cobalt Silicide During Silicide Formation

Crucial Issues in Semiconductor Materials and Processing Technologies ◽

10.1007/978-94-011-2714-1_36 ◽

1992 ◽

pp. 369-374 ◽

Cited By ~ 2

Author(s):

C. M. Comrie ◽

J. E. McLeod

Keyword(s):

Cobalt Silicide ◽

Silicide Formation

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In situ analysis of epitaxial cobalt silicide reaction on silicon (001)

Vacuum ◽

10.1016/j.vacuum.2003.12.075 ◽

2004 ◽

Vol 73 (3-4) ◽

pp. 595-601 ◽

Cited By ~ 5

Author(s):

Kunihiro Sakamoto ◽

Tatsurou Maeda

Keyword(s):

In Situ Analysis ◽

Cobalt Silicide

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Titanium Silicide Formation in Presence of Oxygen

Active and Passive Electronic Components ◽

10.1155/1992/94394 ◽

1992 ◽

Vol 15 (1) ◽

pp. 9-26 ◽

Cited By ~ 3

Author(s):

C. Nobili ◽

F. Nava ◽

G. Ottaviani ◽

M. Costato ◽

G. De Santi ◽

...

Keyword(s):

Electron Spectroscopy ◽

Rutherford Backscattering Spectrometry ◽

Titanium Silicide ◽

Silicide Formation ◽

Metal Oxidation ◽

X Ray Diffraction ◽

Amorphous Films ◽

Titanium Disilicide ◽

X Ray

In-situ resistivity vs. temperature, Rutherford backscattering spectrometry, Auger electron spectroscopy and X-ray diffraction measurements have been performed in order to study the effects arising from the presence of oxygen in the annealing ambient on the integrity of amorphous films of TiSix, with x ranging from 1.45 to 2.1. Crystalisation occurs around 400 C. The presence of oxygen produces the formation of silicon and titanium oxide around 500 C. Critical analysis of the experimental results have indicated that metal oxidation is inhibited when an excess of silicon is present, which suggests the use of a sputtered Si coating cap as a medium capable of effectively decoupling the silicide film from oxygen. This avoids unwanted Ti oxidation even in heavily oxygen contaminated ambients up to the highest temperatures used for the formation of low resistivity titanium disilicide.

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In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110)

Applied Physics Letters ◽

10.1063/1.1948519 ◽

2005 ◽

Vol 86 (23) ◽

pp. 233108 ◽

Cited By ~ 54

Author(s):

Hiroyuki Okino ◽

Iwao Matsuda ◽

Rei Hobara ◽

Yoshikazu Hosomura ◽

Shuji Hasegawa ◽

...

Keyword(s):

Cobalt Silicide

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