Kinetics of Pt Silicide Formation Studied by Spectral Ellipsometry

1997 ◽  
Vol 470 ◽  
Author(s):  
R. Schwarz ◽  
A. Dittrich ◽  
S. M. Zhou ◽  
M. Hundhausen ◽  
L. Ley ◽  
...  
Keyword(s):  
Activation Energy ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Spectral Ellipsometry ◽  
Step Process ◽  
Depth Profiles ◽  
Ellipsometric Angle ◽  
Kinetics Of

ABSTRACTSuicide formation during thermal annealing of thin Pt layers deposited by evaporation onto crystalline silicon substrates was studied by in-situ spectral ellipsometry. As was shown in an earlier study, Pt suicide is formed in a two-step process with intermediate stages of Pt2Si and PtSi at temperatures of about 190 and 240 °C, respectively. We observed a shift of about 15 °C of the di- and monosilicide formation, when the anneal rate was lowered from 3 to 1 K/min. The analysis of the reaction kinetics using the normalized ellipsometric angle δ yields a good fit to the data for different anneal rates with an activation energy of (1.6 ± 0.2) eV. The underlying model of suicide formation through a multilayer system was checked with depth profiles and compositional information obtained from Rutherford Backscattering.

Reaction Kinetics of Atomic chlorine on Si(100)2×1

1992 ◽  
Vol 280 ◽  
Author(s):  
Kazuhiro Karahashi ◽  
Jiro Matsuo ◽  
Kei Horiuchi
Keyword(s):  
Activation Energy ◽  
Transition State ◽  
Solid Surface ◽  
Surface Reaction ◽  
Thermal Excitation ◽  
Silicon Substrates ◽  
Chlorine Atoms ◽  
Substrate Temperatures ◽  
Kinetics Of ◽  
Atomic Chlorine

ABSTRACTThe interaction of atomic chlorine with Si(100)2×1 surfaces was studied by using chlorine atom beams. The etching reaction of silicon substrates has been observed when chlorine atoms impinged on the chlorinated surface, at substrate temperatures below 600°C. The major desorption product is SiCl2. Studies of the temperature dependence of the reaction showed that the activation energy are 0.08 eV at 0.4 ML and 0.2 eV at 0.8 ML. These extremely low activation energies suggest that the surface reaction is mainly driven by the internal energy of incident atomic chlorine instead of thermal excitation from Si(100) solid surface. Therefore chlorine atoms enter the transition state without equilibrating at the surface prior to the reaction. The reaction strongly depends on the chlorine coverage on the surface. The reaction occurred above 0.3 ML. The etching probability of the surface reached a maximum at 0.4 ML, and decreased with increasing coverage.

Nitridation Isothermal Kinetics of In Situ β-Sialon Bonded Al2O3-C Refractories

2016 ◽  
Vol 697 ◽  
pp. 572-575
Author(s):  
Xue Qing Yang ◽  
Nai Peng ◽  
Cheng Ji Deng
Keyword(s):  
Activation Energy ◽  
Apparent Activation Energy ◽  
Isothermal Kinetics ◽  
Nitridation Reaction ◽  
Result Show ◽  
Different Temperatures ◽  
Two Stages ◽  
Kinetics Of ◽  
And Diffusion

The kinetics of in-situ β- Sialon bonded Al2O3-C (SAC) refractories were investigated by TGA techniques via isothermal nitridation experiments at different temperatures. The result show that the nitridation process of in-situ β-Sialon bonded Al2O3-C refractories can be divided into two stages: the nitridation reaction rate controlling stage in the first 10 min, and the apparent activation energy of nitridation reaction is 370 kJ/mol ; then the reaction is controlled by both chemical reaction and diffusion rate in the following 110 min, the apparent activation energy of nitridation reaction is 410 kJ/mol.

Kinetics of silicide formation measured by in situ ramped resistance measurements

1996 ◽  
Vol 79 (8) ◽  
pp. 4087 ◽  
Author(s):  
E. G. Colgan ◽  
F. M. d’Heurle
Keyword(s):  
Silicide Formation ◽  
Kinetics Of

Temperature Dependence of Nanoscale Friction Investigated with Thermal AFM Probes

2009 ◽  
Vol 1226 ◽  
Author(s):  
Christian Greiner ◽  
Jonathan R. Felts ◽  
Zhenting Dai ◽  
William P. King ◽  
Robert W. Carpick
Keyword(s):  
Room Temperature ◽  
Capillary Condensation ◽  
Constant Load ◽  
Native Oxide ◽  
Silicon Substrates ◽  
Ambient Atmosphere ◽  
Ambient Conditions ◽  
Nanoscale Friction ◽  
Kinetics Of

AbstractMeasurements of nanoscale friction between silicon AFM tips featuring an in-situ solid state heater and silicon substrates (both with native oxide) were performed. The temperature of the heater was varied between room temperature and approximately 650 °C. For these temperatures and the silicon substrate, the temperatures at the point of contact are estimated to range from room temperature to approximately 120±20 °C. Experiments were carried out in ambient atmosphere (˜30% relative humidity) and under dry nitrogen. Tests under constant load revealed that in the presence of ambient, friction increased with heater temperature whereas it did not change in dry nitrogen. For experiments carried out for different tip velocities (40 to 7800 nm/s), friction decreased with velocity in ambient and did not change in dry nitrogen. Both trends can be explained by thermally-assisted formation of capillary bridges between tip and substrate and the kinetics of capillary condensation under ambient conditions.

In Situ Investigation of the a-Si:H/C-Si Interface

1996 ◽  
Vol 420 ◽  
Author(s):  
H. Feist ◽  
C. Swiatkowski ◽  
J. R. Elmiger ◽  
M. Zipfel ◽  
M. Kunst
Keyword(s):  
Crystalline Silicon ◽  
Microwave Frequency ◽  
Ex Situ ◽  
Silicon Substrates ◽  
Si Substrates ◽  
In Situ Investigation ◽  
Drastic Increase ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

AbstractThe deposition of a-Si:H films on crystalline silicon substrates was monitored in situ by transient photoconductivity measurements in the microwave frequency range. At the start of the deposition a drastic increase of the interface recombination velocity was observed, followed by a rapid decrease. The implications of these results for the structure of the interface are discussed. Changes of the interface after deposition were detected without a change of the temperature, even at 250'C: The long relaxation time of the structure of the interface will be discussed. Ex situ results on the samples produced will be compared to the in situ results in view of the passivation properties of a-Si:H films on c-Si substrates.

Structural Re-Organization Kinetics of Nanocrystalline Pt Films during In Situ Annealing

2012 ◽  
Vol 323-325 ◽  
pp. 149-154 ◽  
Author(s):  
Wolfgang Gruber ◽  
Sujoy Chakravarty ◽  
Carsten Baehtz ◽  
Harald Schmidt
Keyword(s):  
Activation Energy ◽  
Bragg Peak ◽  
Isothermal Annealing ◽  
Direct Proof ◽  
In Situ Xrd ◽  
Columnar Grains ◽  
Pt Films ◽  
Heating Up ◽  
Kinetics Of

In this work we investigated the structural re-organization of thin nanocrystalline Pt films in the temperature range between 250 °C and 400 °C by in-situ XRD, GIXRD and XRR synchrotron experiments. A re-orientation of (111) atomic planes and a relaxation of residual stress occurs. After heating up, Bragg peak fringes can be observed in the diffractograms. They are a direct proof that the Pt films are built of (111) columnar grains which essentially reach the whole film thickness of about 40 nm. During isothermal annealing a relaxation of the dispersion parameter of the atomic planes takes place which is associated with an activation energy of (0.4 ± 0.1) eV.

GLANCING ANGLE REACTIVE PULSED LASER DEPOSITION (GRPLD) FOR Bi2O3/Si HETEROSTRUCTURE

2013 ◽  
Vol 27 (16) ◽  
pp. 1350122 ◽  
Author(s):  
EVAN T. SALIM ◽  
MARWA S. AL WAZNY ◽  
MAKRAM A. FAKHRY
Keyword(s):  
Crystalline Silicon ◽  
Silicon Substrates ◽  
In Situ Oxidation ◽  
Current Voltage ◽  
Glancing Angle ◽  
Heterojunction Device ◽  
Oxide Particles ◽  
Current Voltage Characteristics ◽  
P Type

Thin films of micro bismuth oxide particles were successfully prepared by in situ oxidation of the laser ablated bismuth metal. (111) oriented p-type crystalline silicon substrates were used. The effects of substrate tiled angle on the characteristics of the prepared film were studied. Also, the performance of n- Bi 2 O 3/p- Si heterojunction device was investigated. The obtained current–voltage characteristics in dark and under illumination insure the dependence of the fabricated device characteristic on the deposition angle. The I–V characteristics show that all prepared devices are of abrupt type.

Synthesis and Oxidation Kinetics of Sol-Gel and Sputtered Tantalum Nitride Thin Films

1995 ◽  
Vol 410 ◽  
Author(s):  
Gerald T. Kraus ◽  
Cory S. Oldweiler ◽  
Emmanuel P. Giannelis
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Oxidation Kinetics ◽  
Sol Gel ◽  
Tantalum Nitride ◽  
Sputtered Films ◽  
Parabolic Oxidation ◽  
Sol Gel Films ◽  
Kinetics Of

ABSTRACTTantalum nitride thin films were produced by nitridation of sol-gel tantala thin films. The oxidation kinetics and the activation energy for oxidation were investigated and compared to those of sputtered tantalum nitride thin films. Data was gathered from in situ sheet resistance measurements taken between 550 and 720 K. Sol-gel films exhibited parabolic oxidation kinetics and had an activation energy of 1.9 eV. Sputtered films displayed quartic oxidation kinetics at lower temperatures tending toward cubic kinetics at higher temperatures and had an activation energy of 1.6 eV.

Evidence of a Correlation Between the Transition Temperature for Ordering and the Activation Energy for Ordering Kinetics in Ni75Al25-xFex Superalloys

1990 ◽  
Vol 205 ◽  
Author(s):  
R. Kozubski ◽  
J. Soltys ◽  
M.C. Cadeville ◽  
V. Pierron-Bohhes
Keyword(s):  
Activation Energy ◽  
Transition Temperature ◽  
Long Range ◽  
Theoretical Models ◽  
Considerable Effect ◽  
Ordering Kinetics ◽  
Current Value ◽  
Long Range Ordering ◽  
Kinetics Of

AbstractKinetics of long-range ordering was studied in the alloys Ni75Al25-xFex by means of in situ resistometry. The alloys under consideration exhibit a dramatic decrease of the "order-disorder" transition temperature Ttr with increasing X. After the existing theoretical models, the activation energy of long-range ordering should depend on one hand on the energy of ordering - related to Ttr -, and on the other hand, on the current value of the LRO degree. The performed measurements yield an experimental evidence of the above relationships. In addition, a considerable effect of magnetic order on LRO kinetics has also been registered. The results are qualitatively discussed in terms of the model of LRO kinetics in L12 structure proposed by Schoijet and Girifalco.

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