Nanoporous Alumina Template with In Situ Barrier Oxide Removal, Synthesized from a Multilayer Thin Film Precursor

2005 ◽  
Vol 152 (10) ◽  
pp. D167 ◽  
Author(s):  
Michael M. Crouse ◽  
Albert E. Miller ◽  
David T. Crouse ◽  
Ataul Aziz Ikram
Keyword(s):  
Thin Film ◽  
Multilayer Thin Film ◽  
Alumina Template ◽  
Nanoporous Alumina ◽  
Oxide Removal

In situ ellipsometric diagnostics of multilayer thin film deposition during sputtering

1998 ◽  
Vol 313-314 ◽  
pp. 511-515 ◽  
Author(s):  
Xiang Gao ◽  
Darin W Glenn ◽  
John A Woollam
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Multilayer Thin Film

Fabrication of Thin Film Titania with Nanopores, Nanopoles, and Nanopipes by Nanoporous Alumina Template

2008 ◽  
Vol 8 (9) ◽  
pp. 4808-4812 ◽  
Author(s):  
Hyun-Jung Her ◽  
Jung-Min Kim ◽  
C. J. Kang ◽  
Yong-Sang Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dense Array ◽  
Alumina Template ◽  
Nanoporous Alumina ◽  
Aspect Ratios ◽  
Sensing Applications ◽  
Anodization Process ◽  
Titania Films ◽  
Lithography Technique

We demonstrate the formation of thin film titania (TiO2) with a dense array of nanopores, nanopoles, and nanopipes. The heights of pores, poles, and pipes were approximately 130 nm, 180 nm, and 200 nm, respectively. The aspect ratios of these three structures were approximated between 2 and 3. In order to obtain titania thin films, a nanoporous alumina (Al2O3) template was fabricated by performing a two-step anodization process. The spin-coated titania films were uniformly patterned by a nanoimprinting lithography technique with a textured poly(methyl methacrylate) (PMMA) mold or nanoporous alumina template. The titania films are very useful for solar cells, photocatalytic and sensing applications, in which nano-structuring of surfaces with controlled dimensions is vital.

Finite element modeling of stress variation in multilayer thin-film specimens for in situ transmission electron microscopy experiments

2007 ◽  
Vol 22 (10) ◽  
pp. 2737-2741 ◽  
Author(s):  
H. Mei ◽  
J.H. An ◽  
R. Huang ◽  
P.J. Ferreira
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Finite Element Method ◽  
Transmission Electron Microscopy ◽  
Finite Element ◽  
Residual Stresses ◽  
Multilayer Thin Film ◽  
Stress Variation ◽  
Transmission Electron

Multilayer thin-film materials with various thicknesses, compositions, and deposition methods for each layer typically exhibit residual stresses. In situ transmission electron microscopy (TEM) is a powerful technique that has been used to determine correlations between residual stresses and the microstructure. However, to produce electron transparent specimens for TEM, one or more layers of the film are sacrificed, thus altering the state of stresses. By conducting a stress analysis of multilayer thin-film TEM specimens, using a finite element method, we show that the film stresses can be considerably altered after TEM sample preparation. The stress state depends on the geometry and the interactions among multiple layers.

H2-gas sensing and discriminating actions of a single-yarn sensor based on a Pd/GO multilayered thin film using FFT

2020 ◽  
Vol 12 (27) ◽  
pp. 3537-3544 ◽  
Author(s):  
Pi-Guey Su ◽  
Sheng Lin-Kuo
Keyword(s):  
Thin Film ◽  
Gas Sensor ◽  
Gas Sensing ◽  
Multilayer Thin Film ◽  
Multilayered Thin Film ◽  
Self Assembling ◽  
Single Yarn ◽  
Self Assembled

A single-yarn H2-gas sensor was fabricated by self-assembling Pd/GO/PAH/PSS/PAH/yarn multilayer thin film in situ self-assembled on a single-yarn.

Anisotropic in-situ stretching-strain engineering of flexible multilayer thin-film nanogenerators with Cu interlayers

Nano Energy ◽  
2021 ◽  
Vol 82 ◽  
pp. 105690
Author(s):  
Ye Seul Jung ◽  
Hong Je Choi ◽  
Jae Woo Park ◽  
Yong Soo Cho
Keyword(s):  
Thin Film ◽  
Strain Engineering ◽  
Multilayer Thin Film

scholarly journals The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template

2014 ◽  
Vol 9 (1) ◽  
pp. 584 ◽  
Author(s):  
Changjun Jiang ◽  
Lei Wu ◽  
WenWen Wei ◽  
Chunhui Dong ◽  
Jinli Yao
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Alumina Template ◽  
Nanoporous Alumina ◽  
Resistive Switching Memory ◽  
Switching Memory

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

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