Vacuum‐Deposited Gold Films: II . Role of the Crystallographic Orientation of Oxide‐Covered Silicon Substrates

1995 ◽  
Vol 142 (5) ◽  
pp. 1629-1633 ◽  
Author(s):  
Yuval Golan ◽  
Lev Margulis ◽  
Sophie Matlis ◽  
Israel Rubinstein
Keyword(s):  
Crystallographic Orientation ◽  
Silicon Substrates ◽  
Gold Films

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

Electrical and Optical Properties of LiNbO3/CaCu3Ti4O12 Heterostructures on Si

2015 ◽  
Vol 1805 ◽  
Author(s):  
Javad R. Gatabi ◽  
Kevin A. Lyon ◽  
Shafiqur Rahman ◽  
Hanu Arava ◽  
Juan S Rojas-Ramirez ◽  
...  
Keyword(s):  
Thin Films ◽  
Cost Effective ◽  
Deposition Process ◽  
Structural Quality ◽  
Silicon Substrates ◽  
Solution Deposition ◽  
Effective Spin ◽  
Capacitance Variation ◽  
Crystallization Conditions

ABSTRACTThe role of ferroelectric LiNbO3 (LNB) in altering the frequency dependence of the capacitance of CaCu3Ti4O12 (CCTO) thin films has been investigated. A cost effective spin coating deposition process was used to integrate the oxide heterostructures onto silicon substrates. This study showed that the frequency stability of the CCTO/LNB structure was much improved when the crystallization conditions and physical dimension of each layer were optimized. To integrate this structure with current silicon technology, heterostructures of CCTO and LNB thin films were fabricated on HF terminated Si using chemical solution deposition. It was found that the order of deposition of the two layers was important for the structural quality of the heterostructures with the CCTO layer followed by the LNB layer being the preferred structure. In addition to improvement of the capacitance variation with frequency, the heterostructures also provide a path to tuning the frequency of operation.

TEM and SEM-CL Studies of SiC Nanowires

2010 ◽  
Vol 645-648 ◽  
pp. 387-390
Author(s):  
Francesca Rossi ◽  
Filippo Fabbri ◽  
Giovanni Attolini ◽  
Matteo Bosi ◽  
Bernard Enrico Watts ◽  
...  
Keyword(s):  
Carbon Monoxide ◽  
Point Defects ◽  
Shell Structures ◽  
Core Shell ◽  
Silicon Substrates ◽  
Luminescence Enhancement ◽  
Sic Nanowires ◽  
Effective Role ◽  
Shell Nanowires

-SiC and -SiC/SiO2 core-shell nanowires (NWs) grown on silicon substrates by three different processes, based on the use of i) carbon monoxide, ii) silane with propane and iii) carbon tetrachloride precursors, are analysed by structural and optical techniques. Spectroscopic cathodoluminescence studies show a luminescence enhancement in core-shell structures, ascribed to an effective role of the shell as both carrier injecting barrier and passivation layer. In NWs grown using CCl4 precursor, a peculiar luminescence with dominant red component at about 2 eV has been detected and ascribed to point defects related to an unintentional oxygen incorporation.

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