A Mathematical Model for the Influence of Deep‐Level Electronic States on Photoelectrochemical Impedance Spectroscopy: II . Assessment of Characterization Methods Based on Mott‐Schottky Theory

1992 ◽  
Vol 139 (1) ◽  
pp. 127-131 ◽  
Author(s):  
D. Bivings Bonham ◽  
Mark E. Orazem
Keyword(s):  
Mathematical Model ◽  
Impedance Spectroscopy ◽  
Deep Level ◽  
Electronic States ◽  
Characterization Methods

Optically Stimulated Deep‐Level Impedance Spectroscopy: Application to an n‐GaAs Schottky Diode

1996 ◽  
Vol 143 (12) ◽  
pp. 4074-4079 ◽  
Author(s):  
Andrew N. Jansen ◽  
Mark E. Orazem
Keyword(s):  
Impedance Spectroscopy ◽  
Schottky Diode ◽  
Deep Level

Identification of Deep‐Level States in Electronic Materials by Optically Stimulated Deep Level Impedance Spectroscopy

1992 ◽  
Vol 139 (5) ◽  
pp. 1463-1469 ◽  
Author(s):  
Andrew N. Jansen ◽  
Mark E. Orazem
Keyword(s):  
Impedance Spectroscopy ◽  
Electronic Materials ◽  
Deep Level

Electrical Properties of Clustered and Precipitated Iron in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 109-114
Author(s):  
R. Khalil ◽  
Vitaly V. Kveder ◽  
Wolfgang Schröter ◽  
Michael Seibt
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Iron Silicide ◽  
Electronic States ◽  
Moderate Temperature ◽  
Extended Defects ◽  
Characteristic Features ◽  
Transient Spectroscopy ◽  
The Stability

Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The observed spectra show the characteristic features of bandlike states at extended defects. From the stability of the states on annealing at moderate temperature they are tentatively attributed to precipitate-matrix interfaces.

Electronic states of selected deep level defects in III–V semiconductors

Physica B+C ◽  
1983 ◽  
Vol 116 (1-3) ◽  
pp. 116-120 ◽  
Author(s):  
L.A. Hemstreet
Keyword(s):  
Deep Level ◽  
Electronic States

A mathematical model for electrochemical impedance spectroscopy (EIS) of metal hydride electrodes

1998 ◽  
Vol 43 (12-13) ◽  
pp. 1945-1949 ◽  
Author(s):  
Yongjun Leng ◽  
Jianqing Zhang ◽  
Shaoan Cheng ◽  
Chu'nan Cao ◽  
Zishuang Ye
Keyword(s):  
Mathematical Model ◽  
Electrochemical Impedance Spectroscopy ◽  
Impedance Spectroscopy ◽  
Metal Hydride ◽  
Electrochemical Impedance ◽  
Metal Hydride Electrodes

A mathematical model for electrical impedance spectroscopy of zwitterionic hydrogels

Soft Matter ◽  
2016 ◽  
Vol 12 (33) ◽  
pp. 7028-7037 ◽  
Author(s):  
Sarah E. Feicht ◽  
Aditya S. Khair
Keyword(s):  
Mathematical Model ◽  
Impedance Spectroscopy ◽  
Electrical Impedance ◽  
Electrical Impedance Spectroscopy

Electronic States of Grain Boundaries in Bicrystal Silicon

1982 ◽  
Vol 14 ◽  
Author(s):  
C. M. Shyu ◽  
L. J. Cheng ◽  
K. L. Wang
Keyword(s):  
Density Of States ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electronic States ◽  
Boundary Plane ◽  
Tilt Boundary ◽  
Electrical Measurements ◽  
Transient Spectroscopy ◽  
A Minor ◽  
P Type

ABSTRACTElectronic states at a 20° symmetrical(100) tilt boundary in p-type silicon were studied using deep level transient spectroscopy (DLTS) and other electrical measurements. The data can be explained with a model in which the local barrier height at the grain boundary varies on a scale much smaller than the boundary plane (∼I mm2) under study. Based on a relationship between the carrier capture cross section and energy level deduced from the experimental data, we have been able to calculate the distribution of the density of states in the energy bandgap at the boundary, which contains two groups of continuously distributed states; a major one whose density of states increases monotonically with the position of the state from the valance band, and a minor narrow one whose density of states is centered at Ev,+0.20 eV.

Sign in / Sign up

Export Citation Format

Share Document