A Dry Etching Technique Using Electron Beam Resist‐PBS

1980 ◽  
Vol 127 (8) ◽  
pp. 1859-1861 ◽  
Author(s):  
T. Yamazaki ◽  
Y. Watakabe ◽  
Y. Suzuki ◽  
H. Nakata
2010 ◽  
Vol 459 ◽  
pp. 116-119 ◽  
Author(s):  
Takuro Tamura ◽  
Yasunari Tanaka ◽  
Takashi Akahane ◽  
You Yin ◽  
Sumio Hosaka

In this study, we investigated the possibility of forming the fine Si dot arrays by means of electron beam (EB) lithography and dry etching technique for the future’s devices with nano-scale structures. We examined the properties of Ar ion milling for the fabrication of nanometer sized Si dot arrays on a Si substrate. We have succeeded in forming 40 nm pitched Si dot arrays with a diameter of <20 nm using dot array patterns of the calixarene resist as a mask. We also obtained the Ar ion milling property that there exists the horizontal milling rate as well as the vertical milling rate. We formed Si dot arrays with a dot diameter of about 10 nm using this property. It was clarified that Ar ion milling and EB lithography with calixarene resist has the potential to form Si nano dot arrays for the nano devices.


1980 ◽  
Vol 11 (51) ◽  
Author(s):  
T. YAMAZAKI ◽  
Y. WATAKABE ◽  
Y. SUZUKI ◽  
H. NAKATA

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 775
Author(s):  
Hiroki Kamai ◽  
Yan Xu

Nanofluidics is supposed to take advantage of a variety of new physical phenomena and unusual effects at nanoscales typically below 100 nm. However, the current chip-based nanofluidic applications are mostly based on the use of nanochannels with linewidths above 100 nm, due to the restricted ability of the efficient fabrication of nanochannels with narrow linewidths in glass substrates. In this study, we established the fabrication of nanofluidic structures in glass substrates with narrow linewidths of several tens of nanometers by optimizing a nanofabrication process composed of electron-beam lithography and plasma dry etching. Using the optimized process, we achieved the efficient fabrication of fine glass nanochannels with sub-40 nm linewidths, uniform lateral features, and smooth morphologies, in an accurate and precise way. Furthermore, the use of the process allowed the integration of similar or dissimilar material-based ultrasmall nanocomponents in the ultranarrow nanochannels, including arrays of pockets with volumes as less as 42 zeptoliters (zL, 10−21 L) and well-defined gold nanogaps as narrow as 19 nm. We believe that the established nanofabrication process will be very useful for expanding fundamental research and in further improving the applications of nanofluidic devices.


2015 ◽  
Vol 1 (1) ◽  
pp. 13-19 ◽  
Author(s):  
G. Grenci ◽  
E. Zanchetta ◽  
A. Pozzato ◽  
G. Della Giustina ◽  
G. Brusatin ◽  
...  

Vacuum ◽  
1990 ◽  
Vol 41 (4-6) ◽  
pp. 899-901 ◽  
Author(s):  
A.M Barklund ◽  
H.-O Blom ◽  
S Berg ◽  
L Bardos

1993 ◽  
Vol 21 (1-4) ◽  
pp. 479-482 ◽  
Author(s):  
W. Langheinrich ◽  
B. Spangenberg ◽  
R. Barth ◽  
H. Kurz

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